Abstract

A broad-area semiconductor laser diode with two monolithically integrated optical elements is presented. A 275-nm period detuned second-order diffraction grating on the p-doped side layer is combined with a refractive lens transferred into the GaAs substrate so that outcoupling and beam-shaping functions are decoupled. The high-power device produces a circular spot and demonstrates the potential of dual optics integration in broad-area semiconductor diodes.

© 2003 Optical Society of America

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Corrections

Laurent Vaissié, Waleed Mohammed, and Eric G. Johnson, "Monolithic integration of dual-layer optics into broad-area semiconductor laser diodes: erratum," Opt. Lett. 28, 1280-1280 (2003)
https://www.osapublishing.org/ol/abstract.cfm?uri=ol-28-14-1280

References

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  1. A. M. Rashed, K. A. Williams, R. V. Penty, I. H. White, P. J. Heard, J. C. C. Day, and G. C. Allen, in Digest of Conference on Lasers and Electro-Optics (CLEO/Pacific Rim) (Optical Society of America, Washington, D.C., 1999), p. 1092.
  2. Y. Fu and N. K. A. Bryan, IEEE Trans. Semiconductor Manufacturing 15, 2 (2002).
    [Crossref]
  3. H. Martinsson, J. Bengtsson, M. Ghisoni, and A. Larsson, IEEE Photon. Technol. Lett. 11, 503 (1999).
    [Crossref]
  4. N. Eriksson, J. Bengtsson, M. Li, P. Modh, and A. Larsson, IEEE Photon. Technol. Lett. 9, 1570 (1997).
    [Crossref]
  5. N. Eriksson, P. Modh, and A. Larsson, IEEE Photon. Technol. Lett. 11, 1366 (1999).
    [Crossref]
  6. P. Modh, J. Backlund, N. Eriksson, J. Bengtsson, S. Kristjansson, and A. Larsson, Opt. Lett. 27, 574 (2002).
    [Crossref]
  7. G. R. Hadley, J. P. Hohimer, and A. Owyoung, IEEE J. Quantum Electron. 2, 226 (1996).
  8. S. H. Macomber, IEEE J. Quantum Electron. 26, 2065 (1990).
    [Crossref]
  9. T. Tamir and S. T. Peng, Appl. Phys. 14, 235 (1977).
  10. M. Pitchumani, H. Hockel, W. Mohammed, and E. G. Johnson, Appl. Opt. 41, 6176 (2002).
    [Crossref] [PubMed]

2002 (3)

1999 (2)

H. Martinsson, J. Bengtsson, M. Ghisoni, and A. Larsson, IEEE Photon. Technol. Lett. 11, 503 (1999).
[Crossref]

N. Eriksson, P. Modh, and A. Larsson, IEEE Photon. Technol. Lett. 11, 1366 (1999).
[Crossref]

1997 (1)

N. Eriksson, J. Bengtsson, M. Li, P. Modh, and A. Larsson, IEEE Photon. Technol. Lett. 9, 1570 (1997).
[Crossref]

1996 (1)

G. R. Hadley, J. P. Hohimer, and A. Owyoung, IEEE J. Quantum Electron. 2, 226 (1996).

1990 (1)

S. H. Macomber, IEEE J. Quantum Electron. 26, 2065 (1990).
[Crossref]

1977 (1)

T. Tamir and S. T. Peng, Appl. Phys. 14, 235 (1977).

Allen, G. C.

A. M. Rashed, K. A. Williams, R. V. Penty, I. H. White, P. J. Heard, J. C. C. Day, and G. C. Allen, in Digest of Conference on Lasers and Electro-Optics (CLEO/Pacific Rim) (Optical Society of America, Washington, D.C., 1999), p. 1092.

Backlund, J.

Bengtsson, J.

P. Modh, J. Backlund, N. Eriksson, J. Bengtsson, S. Kristjansson, and A. Larsson, Opt. Lett. 27, 574 (2002).
[Crossref]

H. Martinsson, J. Bengtsson, M. Ghisoni, and A. Larsson, IEEE Photon. Technol. Lett. 11, 503 (1999).
[Crossref]

N. Eriksson, J. Bengtsson, M. Li, P. Modh, and A. Larsson, IEEE Photon. Technol. Lett. 9, 1570 (1997).
[Crossref]

Bryan, N. K. A.

Y. Fu and N. K. A. Bryan, IEEE Trans. Semiconductor Manufacturing 15, 2 (2002).
[Crossref]

Day, J. C. C.

A. M. Rashed, K. A. Williams, R. V. Penty, I. H. White, P. J. Heard, J. C. C. Day, and G. C. Allen, in Digest of Conference on Lasers and Electro-Optics (CLEO/Pacific Rim) (Optical Society of America, Washington, D.C., 1999), p. 1092.

Eriksson, N.

P. Modh, J. Backlund, N. Eriksson, J. Bengtsson, S. Kristjansson, and A. Larsson, Opt. Lett. 27, 574 (2002).
[Crossref]

N. Eriksson, P. Modh, and A. Larsson, IEEE Photon. Technol. Lett. 11, 1366 (1999).
[Crossref]

N. Eriksson, J. Bengtsson, M. Li, P. Modh, and A. Larsson, IEEE Photon. Technol. Lett. 9, 1570 (1997).
[Crossref]

Fu, Y.

Y. Fu and N. K. A. Bryan, IEEE Trans. Semiconductor Manufacturing 15, 2 (2002).
[Crossref]

Ghisoni, M.

H. Martinsson, J. Bengtsson, M. Ghisoni, and A. Larsson, IEEE Photon. Technol. Lett. 11, 503 (1999).
[Crossref]

Hadley, G. R.

G. R. Hadley, J. P. Hohimer, and A. Owyoung, IEEE J. Quantum Electron. 2, 226 (1996).

Heard, P. J.

A. M. Rashed, K. A. Williams, R. V. Penty, I. H. White, P. J. Heard, J. C. C. Day, and G. C. Allen, in Digest of Conference on Lasers and Electro-Optics (CLEO/Pacific Rim) (Optical Society of America, Washington, D.C., 1999), p. 1092.

Hockel, H.

Hohimer, J. P.

G. R. Hadley, J. P. Hohimer, and A. Owyoung, IEEE J. Quantum Electron. 2, 226 (1996).

Johnson, E. G.

Kristjansson, S.

Larsson, A.

P. Modh, J. Backlund, N. Eriksson, J. Bengtsson, S. Kristjansson, and A. Larsson, Opt. Lett. 27, 574 (2002).
[Crossref]

N. Eriksson, P. Modh, and A. Larsson, IEEE Photon. Technol. Lett. 11, 1366 (1999).
[Crossref]

H. Martinsson, J. Bengtsson, M. Ghisoni, and A. Larsson, IEEE Photon. Technol. Lett. 11, 503 (1999).
[Crossref]

N. Eriksson, J. Bengtsson, M. Li, P. Modh, and A. Larsson, IEEE Photon. Technol. Lett. 9, 1570 (1997).
[Crossref]

Li, M.

N. Eriksson, J. Bengtsson, M. Li, P. Modh, and A. Larsson, IEEE Photon. Technol. Lett. 9, 1570 (1997).
[Crossref]

Macomber, S. H.

S. H. Macomber, IEEE J. Quantum Electron. 26, 2065 (1990).
[Crossref]

Martinsson, H.

H. Martinsson, J. Bengtsson, M. Ghisoni, and A. Larsson, IEEE Photon. Technol. Lett. 11, 503 (1999).
[Crossref]

Modh, P.

P. Modh, J. Backlund, N. Eriksson, J. Bengtsson, S. Kristjansson, and A. Larsson, Opt. Lett. 27, 574 (2002).
[Crossref]

N. Eriksson, P. Modh, and A. Larsson, IEEE Photon. Technol. Lett. 11, 1366 (1999).
[Crossref]

N. Eriksson, J. Bengtsson, M. Li, P. Modh, and A. Larsson, IEEE Photon. Technol. Lett. 9, 1570 (1997).
[Crossref]

Mohammed, W.

Owyoung, A.

G. R. Hadley, J. P. Hohimer, and A. Owyoung, IEEE J. Quantum Electron. 2, 226 (1996).

Peng, S. T.

T. Tamir and S. T. Peng, Appl. Phys. 14, 235 (1977).

Penty, R. V.

A. M. Rashed, K. A. Williams, R. V. Penty, I. H. White, P. J. Heard, J. C. C. Day, and G. C. Allen, in Digest of Conference on Lasers and Electro-Optics (CLEO/Pacific Rim) (Optical Society of America, Washington, D.C., 1999), p. 1092.

Pitchumani, M.

Rashed, A. M.

A. M. Rashed, K. A. Williams, R. V. Penty, I. H. White, P. J. Heard, J. C. C. Day, and G. C. Allen, in Digest of Conference on Lasers and Electro-Optics (CLEO/Pacific Rim) (Optical Society of America, Washington, D.C., 1999), p. 1092.

Tamir, T.

T. Tamir and S. T. Peng, Appl. Phys. 14, 235 (1977).

White, I. H.

A. M. Rashed, K. A. Williams, R. V. Penty, I. H. White, P. J. Heard, J. C. C. Day, and G. C. Allen, in Digest of Conference on Lasers and Electro-Optics (CLEO/Pacific Rim) (Optical Society of America, Washington, D.C., 1999), p. 1092.

Williams, K. A.

A. M. Rashed, K. A. Williams, R. V. Penty, I. H. White, P. J. Heard, J. C. C. Day, and G. C. Allen, in Digest of Conference on Lasers and Electro-Optics (CLEO/Pacific Rim) (Optical Society of America, Washington, D.C., 1999), p. 1092.

Appl. Opt. (1)

Appl. Phys. (1)

T. Tamir and S. T. Peng, Appl. Phys. 14, 235 (1977).

IEEE J. Quantum Electron. (2)

G. R. Hadley, J. P. Hohimer, and A. Owyoung, IEEE J. Quantum Electron. 2, 226 (1996).

S. H. Macomber, IEEE J. Quantum Electron. 26, 2065 (1990).
[Crossref]

IEEE Photon. Technol. Lett. (3)

H. Martinsson, J. Bengtsson, M. Ghisoni, and A. Larsson, IEEE Photon. Technol. Lett. 11, 503 (1999).
[Crossref]

N. Eriksson, J. Bengtsson, M. Li, P. Modh, and A. Larsson, IEEE Photon. Technol. Lett. 9, 1570 (1997).
[Crossref]

N. Eriksson, P. Modh, and A. Larsson, IEEE Photon. Technol. Lett. 11, 1366 (1999).
[Crossref]

IEEE Trans. Semiconductor Manufacturing (1)

Y. Fu and N. K. A. Bryan, IEEE Trans. Semiconductor Manufacturing 15, 2 (2002).
[Crossref]

Opt. Lett. (1)

Other (1)

A. M. Rashed, K. A. Williams, R. V. Penty, I. H. White, P. J. Heard, J. C. C. Day, and G. C. Allen, in Digest of Conference on Lasers and Electro-Optics (CLEO/Pacific Rim) (Optical Society of America, Washington, D.C., 1999), p. 1092.

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Figures (4)

Fig. 1
Fig. 1

Dual-layer integrated optics semiconductor laser diode. Light is diffracted by a detuned second-order diffraction grating toward a multilevel lens transferred into the GaAs substrate.

Fig. 2
Fig. 2

Photograph of the 275-nm outcoupler grating obtained by FIB at 45° tilt (insert). The grating was protected by a 1µm-thick layer of platinum coating during the cross-section milling. The corresponding near-field normalized intensity profile is shown along with the theoretical exponential decay predicted by perturbation theory. The near-field profile was obtained from p-side imaging of a device before backside processing.

Fig. 3
Fig. 3

Photograph of the backside of the device obtained by FIB (left). Three-dimensional profile obtained from a Zygo white-light interferometer (right). The aberration terms were obtained from 36 Zernike coefficients.

Fig. 4
Fig. 4

FWHM variation of the intensity profile with respect to distance from the lens (left). The four-level contour images captured with (bottom right) and without (top right) the lens after 1-mm propagation illustrate the focusing effect of the dual-layer optics.

Equations (3)

Equations on this page are rendered with MathJax. Learn more.

Pz=P0exp-2αz,
δi=R-R2-W241/2N,
ri=R2-R-iδi21/2.

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