Abstract

A broad-area semiconductor laser diode with two monolithically integrated optical elements is presented. A 275-nm period detuned second-order diffraction grating on the p-doped side layer is combined with a refractive lens transferred into the GaAs substrate so that outcoupling and beam-shaping functions are decoupled. The high-power device produces a circular spot and demonstrates the potential of dual optics integration in broad-area semiconductor diodes.

© 2003 Optical Society of America

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Errata

Laurent Vaissié, Waleed Mohammed, and Eric G. Johnson, "Monolithic integration of dual-layer optics into broad-area semiconductor laser diodes: erratum," Opt. Lett. 28, 1280-1280 (2003)
https://www.osapublishing.org/ol/abstract.cfm?uri=ol-28-14-1280

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