Abstract

An ultrafast high-contrast all-optical switch produced from a metal-organic vapor phase epitaxy–grown wafer incorporating a 50-period InGaAsP/InGaAsP multiple-quantum-well (MQW) saturable absorber (SA) and a distributed Bragg reflector is described. Postgrowth implantation with 4-MeV nitrogen ions reduces the MQW free-carrier lifetime, and hence the switch recovery time, to 5.2 ps. Incorporation of the MQW SA in an optical cavity results in switching contrast ratios greater than 10 dB. The all-optical switch is used to perform wavelength conversion of 2-ps pulses.

© 2003 Optical Society of America

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