Abstract

We present a new monolithic GaAs-based semiconductor saturable bsorber operating at 1.55 µm. An epitaxially grown absorber mirror in a GaInNAs/GaAs material system was successfully used to mode lock an erbium-doped fiber laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the 1.31.55µm wavelength range.

© 2003 Optical Society of America

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