Abstract

Rib microwaveguides are demonstrated on silicon-on-insulator substrates with Si film thickness of either 380 or 200 nm and a width of 1 µm. Corner mirrors that allow compact 90° turns between two perpendicular waveguides are characterized. Measured propagation losses are 0.4 dB/cm and 0.5 dB/cm for 380-nm and 200-nm Si film, respectively, and mirror losses are 1 dB. This allows the development of applications such as optical interconnects in integrated circuits over propagation distances larger than several centimeters.

© 2003 Optical Society of America

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