Abstract

Quasi-phase-matched (QPM) GaAs structures, 0.5 mm thick, 10 mm long, and with 61µm grating periods, were grown by a combination of molecular-beam epitaxy and hydride vapor phase epitaxy. These were characterized by use of mid-IR second-harmonic generation (SHG) with a ZnGeP2 (ZGP) optical parametric oscillator as a pump source. The SHG efficiencies of QPM GaAs and QPM LiNbO3 were directly compared, and a ratio of nonlinear coefficients d14GaAs/d33LiNbO3=5.01±0.3 was found at 4.1µm fundamental wavelength. For input pulse energies as low as 50 µJ and 60ns pulse duration, an internal SHG conversion efficiency of 33% was measured in QPM GaAs.

© 2002 Optical Society of America

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