Abstract

The surface laser-induced damage threshold (LIDT) of CsLiB6O10 (CLBO) crystal was enhanced twofold with improved crystallinity and ion-beam etching. For crystals with high crystal quality (bulk LIDT, 15.019.0 GW/cm2), the surface LIDT was 1.4-fold higher than for those with conventional crystal quality (bulk LIDT, 9.012.0 GW/cm2). In addition, removal of residual surface-polishing compounds by means of ion-beam etching can further enhance the surface LIDT by another 1.5-fold. Thus, CLBO crystals with high crystal quality and ion-beam etching are now more reliable for high-power UV light generation.

© 2002 Optical Society of America

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