Abstract

An enhancement of the infrared detection efficiency of Si photon-counting detectors by inclusion of SiGe absorbing layers has been demonstrated for what is believed to be the first time. An improvement of 30 times in detection efficiency at a wavelength of 1210 nm compared with that of an all-Si structure operated under identical conditions has been measured. The Si/Si0.7Ge0.3 device is capable of room-temperature operation and has a response time of less than 300 ps.

© 2002 Optical Society of America

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  13. D. C. Herbert, D. Wight, E. Chidley, R. Carline, and Y. Leong, QinetiQ, St. Andrews Road, Malvern, Worchestershire WR14 3PS, UK, have submitted a manuscript entitled “Photon bottle detectors” to IEEE Electron Device Lett.

2001 (2)

J. M. Smith, P. A. Hiskett, and G. S. Buller, Opt. Lett. 26, 731 (2001).
[CrossRef]

D. Stucki, G. Ribordy, A. Stefanov, H. Zbinden, J. G. Rarity, and T. Wall, J. Mod. Opt. 48, 1967 (2001).
[CrossRef]

2000 (2)

1998 (2)

1993 (2)

1992 (1)

M. Ghioni, A. Lacaita, G. Ripamonte, and S. Cova, IEEE J. Quantum Electron. 28, 2678 (1992).
[CrossRef]

1989 (1)

S. Cova, A. Lacaita, M. Ghioni, G. Ripamonti, and T. A. Louis, Rev. Sci. Instrum. 60, 1104 (1989).
[CrossRef]

1986 (1)

S. Luryi, T. P. Pearsall, H. Temkin, and J. C. Bean, IEEE Electron. Device Lett. EDL-7, 104 (1986).
[CrossRef]

1982 (1)

S. R. Forrest, R. G. Smith, and O. K. Kim, IEEE J. Quantum Electron. QE-18, 2040 (1982).
[CrossRef]

Bean, J. C.

S. Luryi, T. P. Pearsall, H. Temkin, and J. C. Bean, IEEE Electron. Device Lett. EDL-7, 104 (1986).
[CrossRef]

Buller, G. S.

Carline, R.

D. C. Herbert, D. Wight, E. Chidley, R. Carline, and Y. Leong, QinetiQ, St. Andrews Road, Malvern, Worchestershire WR14 3PS, UK, have submitted a manuscript entitled “Photon bottle detectors” to IEEE Electron Device Lett.

Chidley, E.

D. C. Herbert, D. Wight, E. Chidley, R. Carline, and Y. Leong, QinetiQ, St. Andrews Road, Malvern, Worchestershire WR14 3PS, UK, have submitted a manuscript entitled “Photon bottle detectors” to IEEE Electron Device Lett.

Cova, S.

S. Pellegrini, G. S. Buller, J. M. Smith, A. M. Wallace, and S. Cova, Meas. Sci. Technol. 11, 712 (2000).
[CrossRef]

M. Ghioni, A. Lacaita, G. Ripamonte, and S. Cova, IEEE J. Quantum Electron. 28, 2678 (1992).
[CrossRef]

S. Cova, A. Lacaita, M. Ghioni, G. Ripamonti, and T. A. Louis, Rev. Sci. Instrum. 60, 1104 (1989).
[CrossRef]

Dautet, H.

Deschampes, P.

Dion, B.

Forrest, S. R.

S. R. Forrest, R. G. Smith, and O. K. Kim, IEEE J. Quantum Electron. QE-18, 2040 (1982).
[CrossRef]

Gautier, J.-D.

Ghioni, M.

M. Ghioni, A. Lacaita, G. Ripamonte, and S. Cova, IEEE J. Quantum Electron. 28, 2678 (1992).
[CrossRef]

S. Cova, A. Lacaita, M. Ghioni, G. Ripamonti, and T. A. Louis, Rev. Sci. Instrum. 60, 1104 (1989).
[CrossRef]

Gisin, N.

Gontijo, I.

Herbert, D. C.

D. C. Herbert, D. Wight, E. Chidley, R. Carline, and Y. Leong, QinetiQ, St. Andrews Road, Malvern, Worchestershire WR14 3PS, UK, have submitted a manuscript entitled “Photon bottle detectors” to IEEE Electron Device Lett.

Hiskett, P. A.

Kim, O. K.

S. R. Forrest, R. G. Smith, and O. K. Kim, IEEE J. Quantum Electron. QE-18, 2040 (1982).
[CrossRef]

Lacaita, A.

M. Ghioni, A. Lacaita, G. Ripamonte, and S. Cova, IEEE J. Quantum Electron. 28, 2678 (1992).
[CrossRef]

S. Cova, A. Lacaita, M. Ghioni, G. Ripamonti, and T. A. Louis, Rev. Sci. Instrum. 60, 1104 (1989).
[CrossRef]

Leong, Y.

D. C. Herbert, D. Wight, E. Chidley, R. Carline, and Y. Leong, QinetiQ, St. Andrews Road, Malvern, Worchestershire WR14 3PS, UK, have submitted a manuscript entitled “Photon bottle detectors” to IEEE Electron Device Lett.

Loudon, A. Y.

Louis, T. A.

S. Cova, A. Lacaita, M. Ghioni, G. Ripamonti, and T. A. Louis, Rev. Sci. Instrum. 60, 1104 (1989).
[CrossRef]

Luryi, S.

S. Luryi, T. P. Pearsall, H. Temkin, and J. C. Bean, IEEE Electron. Device Lett. EDL-7, 104 (1986).
[CrossRef]

MacGregor, A. D.

MacSween, D.

McIntyre, R. J.

Pearsall, T. P.

S. Luryi, T. P. Pearsall, H. Temkin, and J. C. Bean, IEEE Electron. Device Lett. EDL-7, 104 (1986).
[CrossRef]

Pellegrini, S.

S. Pellegrini, G. S. Buller, J. M. Smith, A. M. Wallace, and S. Cova, Meas. Sci. Technol. 11, 712 (2000).
[CrossRef]

Rarity, J. G.

D. Stucki, G. Ribordy, A. Stefanov, H. Zbinden, J. G. Rarity, and T. Wall, J. Mod. Opt. 48, 1967 (2001).
[CrossRef]

Ribordy, G.

D. Stucki, G. Ribordy, A. Stefanov, H. Zbinden, J. G. Rarity, and T. Wall, J. Mod. Opt. 48, 1967 (2001).
[CrossRef]

G. Ribordy, J.-D. Gautier, H. Zbinden, and N. Gisin, Appl. Opt. 37, 2272 (1998).
[CrossRef]

Ripamonte, G.

M. Ghioni, A. Lacaita, G. Ripamonte, and S. Cova, IEEE J. Quantum Electron. 28, 2678 (1992).
[CrossRef]

Ripamonti, G.

S. Cova, A. Lacaita, M. Ghioni, G. Ripamonti, and T. A. Louis, Rev. Sci. Instrum. 60, 1104 (1989).
[CrossRef]

Robertson, M. J.

Smith, J. M.

Smith, R. G.

S. R. Forrest, R. G. Smith, and O. K. Kim, IEEE J. Quantum Electron. QE-18, 2040 (1982).
[CrossRef]

Soref, R. A.

R. A. Soref, Proc. IEEE 81, 1687 (1993).
[CrossRef]

Stefanov, A.

D. Stucki, G. Ribordy, A. Stefanov, H. Zbinden, J. G. Rarity, and T. Wall, J. Mod. Opt. 48, 1967 (2001).
[CrossRef]

Stucki, D.

D. Stucki, G. Ribordy, A. Stefanov, H. Zbinden, J. G. Rarity, and T. Wall, J. Mod. Opt. 48, 1967 (2001).
[CrossRef]

Temkin, H.

S. Luryi, T. P. Pearsall, H. Temkin, and J. C. Bean, IEEE Electron. Device Lett. EDL-7, 104 (1986).
[CrossRef]

Townsend, P. D.

Trottier, C.

Walker, A. C.

Wall, T.

D. Stucki, G. Ribordy, A. Stefanov, H. Zbinden, J. G. Rarity, and T. Wall, J. Mod. Opt. 48, 1967 (2001).
[CrossRef]

Wallace, A. M.

S. Pellegrini, G. S. Buller, J. M. Smith, A. M. Wallace, and S. Cova, Meas. Sci. Technol. 11, 712 (2000).
[CrossRef]

Webb, P.

Wight, D.

D. C. Herbert, D. Wight, E. Chidley, R. Carline, and Y. Leong, QinetiQ, St. Andrews Road, Malvern, Worchestershire WR14 3PS, UK, have submitted a manuscript entitled “Photon bottle detectors” to IEEE Electron Device Lett.

Zbinden, H.

D. Stucki, G. Ribordy, A. Stefanov, H. Zbinden, J. G. Rarity, and T. Wall, J. Mod. Opt. 48, 1967 (2001).
[CrossRef]

G. Ribordy, J.-D. Gautier, H. Zbinden, and N. Gisin, Appl. Opt. 37, 2272 (1998).
[CrossRef]

Appl. Opt. (3)

IEEE Electron. Device Lett. (1)

S. Luryi, T. P. Pearsall, H. Temkin, and J. C. Bean, IEEE Electron. Device Lett. EDL-7, 104 (1986).
[CrossRef]

IEEE J. Quantum Electron. (2)

S. R. Forrest, R. G. Smith, and O. K. Kim, IEEE J. Quantum Electron. QE-18, 2040 (1982).
[CrossRef]

M. Ghioni, A. Lacaita, G. Ripamonte, and S. Cova, IEEE J. Quantum Electron. 28, 2678 (1992).
[CrossRef]

J. Mod. Opt. (1)

D. Stucki, G. Ribordy, A. Stefanov, H. Zbinden, J. G. Rarity, and T. Wall, J. Mod. Opt. 48, 1967 (2001).
[CrossRef]

Meas. Sci. Technol. (1)

S. Pellegrini, G. S. Buller, J. M. Smith, A. M. Wallace, and S. Cova, Meas. Sci. Technol. 11, 712 (2000).
[CrossRef]

Opt. Fibre Technol. (1)

P. D. Townsend, Opt. Fibre Technol. 4, 345 (1998).
[CrossRef]

Opt. Lett. (1)

Proc. IEEE (1)

R. A. Soref, Proc. IEEE 81, 1687 (1993).
[CrossRef]

Rev. Sci. Instrum. (1)

S. Cova, A. Lacaita, M. Ghioni, G. Ripamonti, and T. A. Louis, Rev. Sci. Instrum. 60, 1104 (1989).
[CrossRef]

Other (1)

D. C. Herbert, D. Wight, E. Chidley, R. Carline, and Y. Leong, QinetiQ, St. Andrews Road, Malvern, Worchestershire WR14 3PS, UK, have submitted a manuscript entitled “Photon bottle detectors” to IEEE Electron Device Lett.

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Figures (3)

Fig. 1
Fig. 1

Device structure, showing separate absorption and multiplication layers. The absorption layer in the Si control device is made up of intrinsic silicon (i-Si) only, with no MQWs. (b) Schematic of the electric field profile through the device.

Fig. 2
Fig. 2

Detection efficiency at 200 K of both the Si control at 826-nm and 1210-nm wavelengths and the SiGe device at 826-nm and 1210-nm wavelengths plotted versus excess bias.

Fig. 3
Fig. 3

Detection efficiency of the SiGe device at a wavelength of 1210 nm and 3.6% excess bias (equivalent to 1-V excess bias at 200 K) plotted versus temperature.

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