Abstract

For Gaussian-beam-induced optical limiting based on photoconductive field shielding of electro-optic (EO) birefringence, power-limiting notch widths may be accurately determined by considering the power-limiting threshold for the photorefractive crystal where excess charge accumulates. With sufficient optical intensity the space-charge field completely screens the externally applied electric field, and only a small diffusion field remains. The upper limit of light intensity attenuation is the extinction ratio for the combination of polarizers and EO crystal.

© 2002 Optical Society of America

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