Abstract

We present what is to our knowledge the first experimental study of light-induced reflectivity changes at an αGa/Si interface irradiated by femtosecond and picosecond laser pulses. After exposure, the reflectivity can increase from R0.55, which is typical for αGa, to R0.8, which is close to that of liquid   Ga. The initial step in the reflectivity change of 2–4  ps is resolved with 150-fs laser pulses. The light-induced reflectivity change relaxes during 100 ns10 μs, depending strongly on the background temperature of the Ga mirror and the laser fluence.

© 2001 Optical Society of America

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