The response of individual defect nanoclusters located in the bulk of a dielectric material following exposure to 355-nm, 3-ns high-power laser irradiation is investigated by use of microscopic fluorescence imaging. Experiments were carried out on crystals. We provide direct imaging of the reaction to an external stimulus of individual defect clusters and demonstrate a novel method of studying the dynamic behavior of bulk defects.
© 2001 Optical Society of AmericaFull Article | PDF Article
Tadayuki Imai, Shogo Yagi, Hiroki Yamazaki, and Michio Ono
J. Opt. Soc. Am. B 15(7) 2161-2168 (1998)
S. G. Demos, M. Staggs, M. Yan, H. B. Radousky, and J. J. De Yoreo
Opt. Lett. 24(4) 268-270 (1999)
Lilia C. Courrol, Ricardo E. Samad, Izilda M. Ranieri, Laércio Gomes, Sônia L. Baldochi, Anderson Z. de Freitas, and Nilson D. Vieira, Jr.
J. Opt. Soc. Am. B 22(12) 2560-2563 (2005)