Abstract

The selection of a transverse traveling wave by an inhomogeneous pump profile has been experimentally observed in a class B laser structure. The laser structure consisted of a wide-aperture edge-emitting laser diode operating in pulsed mode to avoid thermal guiding effects. The injection current’s profile was modified from the usual top-hat configuration to a Lorentzian-like profile by the inclusion of a 10μm p-type expitaxial spreading layer. Spatial dependance of the far field on the near field was observed. The same behavior is also demonstrated numerically by use of Maxwell–Bloch equations for semiconductor lasers.

© 2001 Optical Society of America

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