Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers–superluminescent diodes

Abstract

Extremely broadband emission is obtained from semiconductor optical amplifiers–superluminescent diodes with nonidentical quantum wells made of InGaAsP/InP materials. The well sequence is experimentally shown to have a significant influence on the emission spectra. With the three ${\mathrm{In}}_{0.67}{\mathrm{Ga}}_{0.33}{\mathrm{As}}_{0.72}{\mathrm{P}}_{0.28}$ quantum wells near the $n$-cladding layer and the two ${\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As}$ quantum wells near the $p$-cladding layer, all bounded by ${\mathrm{In}}_{0.86}{\mathrm{Ga}}_{0.14}{\mathrm{As}}_{0.3}{\mathrm{P}}_{0.7}$ barriers, the emission spectrum could cover from less than 1.3 to nearly $1.55 \mu \mathrm{m}$, and the FWHM could be near 300  nm.

© 2001 Optical Society of America

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