Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers–superluminescent diodes

Abstract

Extremely broadband emission is obtained from semiconductor optical amplifiers–superluminescent diodes with nonidentical quantum wells made of InGaAsP/InP materials. The well sequence is experimentally shown to have a significant influence on the emission spectra. With the three ${\mathrm{In}}_{0.67}{\mathrm{Ga}}_{0.33}{\mathrm{As}}_{0.72}{\mathrm{P}}_{0.28}$ quantum wells near the $n$-cladding layer and the two ${\mathrm{In}}_{0.53}{\mathrm{Ga}}_{0.47}\mathrm{As}$ quantum wells near the $p$-cladding layer, all bounded by ${\mathrm{In}}_{0.86}{\mathrm{Ga}}_{0.14}{\mathrm{As}}_{0.3}{\mathrm{P}}_{0.7}$ barriers, the emission spectrum could cover from less than 1.3 to nearly $1.55 \mu \mathrm{m}$, and the FWHM could be near 300  nm.

© 2001 Optical Society of America

Experimental characterization of high-speed 1.55 μm buried heterostructure InGaAsP/InGaAlAs quantum-well lasers

M. Nadeem Akram, O. Kjebon, M. Chacinski, R. Schatz, J. Berggren, F. Olsson, S. Lourdudoss, and A. Berrier
J. Opt. Soc. Am. B 26(2) 318-327 (2009)

Asymmetric multiple-quantum-well laser diodes with wide and flat gain

Oh-Kee Kwon, Kang-ho Kim, Eun-Deok Sim, Jong-Hoi Kim, Hyun-Soo Kim, and Kwang-Ryong Oh
Opt. Lett. 28(22) 2189-2191 (2003)

Continuous-wave two-photon absorption in a Watt-class semiconductor optical amplifier

Paul W. Juodawlkis, Jason J. Plant, Joseph P. Donnelly, Ali Motamedi, and Erich P. Ippen
Opt. Express 16(16) 12387-12396 (2008)

Effects of overgrown p-layer on the emission characteristics of the InGaN/GaN quantum wells in a high-indium light-emitting diode

Chih-Yen Chen, Chieh Hsieh, Che-Hao Liao, Wei-Lun Chung, Hao-Tsung Chen, Wenyu Cao, Wen-Ming Chang, Horng-Shyang Chen, Yu-Feng Yao, Shao-Ying Ting, Yean-Woei Kiang, Chih-Chung (C. C.) Yang, and Xiaodong Hu
Opt. Express 20(10) 11321-11335 (2012)

Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode

G. Sun, R. A. Soref, and H. H. Cheng
Opt. Express 18(19) 19957-19965 (2010)