Abstract
Extremely broadband emission is obtained from semiconductor optical amplifiers–superluminescent diodes with nonidentical quantum wells made of InGaAsP/InP materials. The well sequence is experimentally shown to have a significant influence on the emission spectra. With the three quantum wells near the -cladding layer and the two quantum wells near the -cladding layer, all bounded by barriers, the emission spectrum could cover from less than 1.3 to nearly , and the FWHM could be near 300 nm.
© 2001 Optical Society of America
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