Abstract

We report what is to our knowledge the first application of high-efficiency InGaAs/InP photon-counting diode detectors in time-resolved photoluminescence measurements at wavelength greater than 1500  nm. When they were cooled to 77  K and used in conjunction with the time-correlated single-photon counting technique, the detectors were capable of an instrumental response of 230  ps and a noise equivalent power of 2×10-17 W Hz-1/2. Preliminary measurement of a semiconductor heterostructure indicates sensitivity at photogenerated carrier densities as low as 1014 cm-3. This development facilitates the detailed characterization of dominant recombination mechanisms in semiconductor optoelectronic materials and devices designed to operate in the third telecommunications spectral window.

© 2001 Optical Society of America

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