Abstract

By introduction of an optical gating beam on a semiconductor wafer, near-field terahertz (THz) imaging with a dynamic aperture has been realized. The spatial resolution is determined by the focus size of the optical gating bean and the near-field diffraction effect. THz imaging with subwavelength spatial resolution (better than 50 µm) is demonstrated.

© 2000 Optical Society of America

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References

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  1. B. B. Hu and M. C. Nuss, Opt. Lett. 20, 1716 (1995).
    [CrossRef]
  2. D. Mittleman, R. Jacobsen, and M. C. Nuss, IEEE J. Sel. Top. Quantum Electron. 2, 679 (1996).
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  3. E. Betzig and J. Trautmann, Science 257, 189 (1992), and references therein.
    [CrossRef] [PubMed]
  4. S. Hunsche, M. Koch, I. Brener, and M. C. Nuss, Opt. Commun. 150, 22 (1998).
    [CrossRef]
  5. K. Wynne and D. Jaroszynski, Opt. Lett. 24, 25 (1999).
    [CrossRef]
  6. Z. Jiang, G. Xu, and X.-C. Zhang, Appl. Opt. 39, 2982 (2000).
    [CrossRef]
  7. B. Greene, P. Sateta, D. Dykaar, S. Schmitt-Rink, and S. L. Chuang, IEEE J. Quantum Electron. 28, 2302 (1992).
    [CrossRef]
  8. J. Shah, Hot Carriers in Semiconductor Nanostructures: Physics and Applications (Academic, Boston, Mass., 1992), pp. 279–312.
    [CrossRef]
  9. F. G. Sun, X.-C. Zhang, and W. Ji, in Conference on Lasers and Electro-Optics (Optical Society of America, Washington, D.C., 2000), p. 479.

2000

1999

1998

S. Hunsche, M. Koch, I. Brener, and M. C. Nuss, Opt. Commun. 150, 22 (1998).
[CrossRef]

1996

D. Mittleman, R. Jacobsen, and M. C. Nuss, IEEE J. Sel. Top. Quantum Electron. 2, 679 (1996).
[CrossRef]

1995

1992

E. Betzig and J. Trautmann, Science 257, 189 (1992), and references therein.
[CrossRef] [PubMed]

B. Greene, P. Sateta, D. Dykaar, S. Schmitt-Rink, and S. L. Chuang, IEEE J. Quantum Electron. 28, 2302 (1992).
[CrossRef]

Betzig, E.

E. Betzig and J. Trautmann, Science 257, 189 (1992), and references therein.
[CrossRef] [PubMed]

Brener, I.

S. Hunsche, M. Koch, I. Brener, and M. C. Nuss, Opt. Commun. 150, 22 (1998).
[CrossRef]

Chuang, S. L.

B. Greene, P. Sateta, D. Dykaar, S. Schmitt-Rink, and S. L. Chuang, IEEE J. Quantum Electron. 28, 2302 (1992).
[CrossRef]

Dykaar, D.

B. Greene, P. Sateta, D. Dykaar, S. Schmitt-Rink, and S. L. Chuang, IEEE J. Quantum Electron. 28, 2302 (1992).
[CrossRef]

Greene, B.

B. Greene, P. Sateta, D. Dykaar, S. Schmitt-Rink, and S. L. Chuang, IEEE J. Quantum Electron. 28, 2302 (1992).
[CrossRef]

Hu, B. B.

Hunsche, S.

S. Hunsche, M. Koch, I. Brener, and M. C. Nuss, Opt. Commun. 150, 22 (1998).
[CrossRef]

Jacobsen, R.

D. Mittleman, R. Jacobsen, and M. C. Nuss, IEEE J. Sel. Top. Quantum Electron. 2, 679 (1996).
[CrossRef]

Jaroszynski, D.

Ji, W.

F. G. Sun, X.-C. Zhang, and W. Ji, in Conference on Lasers and Electro-Optics (Optical Society of America, Washington, D.C., 2000), p. 479.

Jiang, Z.

Koch, M.

S. Hunsche, M. Koch, I. Brener, and M. C. Nuss, Opt. Commun. 150, 22 (1998).
[CrossRef]

Mittleman, D.

D. Mittleman, R. Jacobsen, and M. C. Nuss, IEEE J. Sel. Top. Quantum Electron. 2, 679 (1996).
[CrossRef]

Nuss, M. C.

S. Hunsche, M. Koch, I. Brener, and M. C. Nuss, Opt. Commun. 150, 22 (1998).
[CrossRef]

D. Mittleman, R. Jacobsen, and M. C. Nuss, IEEE J. Sel. Top. Quantum Electron. 2, 679 (1996).
[CrossRef]

B. B. Hu and M. C. Nuss, Opt. Lett. 20, 1716 (1995).
[CrossRef]

Sateta, P.

B. Greene, P. Sateta, D. Dykaar, S. Schmitt-Rink, and S. L. Chuang, IEEE J. Quantum Electron. 28, 2302 (1992).
[CrossRef]

Schmitt-Rink, S.

B. Greene, P. Sateta, D. Dykaar, S. Schmitt-Rink, and S. L. Chuang, IEEE J. Quantum Electron. 28, 2302 (1992).
[CrossRef]

Shah, J.

J. Shah, Hot Carriers in Semiconductor Nanostructures: Physics and Applications (Academic, Boston, Mass., 1992), pp. 279–312.
[CrossRef]

Sun, F. G.

F. G. Sun, X.-C. Zhang, and W. Ji, in Conference on Lasers and Electro-Optics (Optical Society of America, Washington, D.C., 2000), p. 479.

Trautmann, J.

E. Betzig and J. Trautmann, Science 257, 189 (1992), and references therein.
[CrossRef] [PubMed]

Wynne, K.

Xu, G.

Zhang, X.-C.

Z. Jiang, G. Xu, and X.-C. Zhang, Appl. Opt. 39, 2982 (2000).
[CrossRef]

F. G. Sun, X.-C. Zhang, and W. Ji, in Conference on Lasers and Electro-Optics (Optical Society of America, Washington, D.C., 2000), p. 479.

Appl. Opt.

IEEE J. Quantum Electron.

B. Greene, P. Sateta, D. Dykaar, S. Schmitt-Rink, and S. L. Chuang, IEEE J. Quantum Electron. 28, 2302 (1992).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron.

D. Mittleman, R. Jacobsen, and M. C. Nuss, IEEE J. Sel. Top. Quantum Electron. 2, 679 (1996).
[CrossRef]

Opt. Commun.

S. Hunsche, M. Koch, I. Brener, and M. C. Nuss, Opt. Commun. 150, 22 (1998).
[CrossRef]

Opt. Lett.

Science

E. Betzig and J. Trautmann, Science 257, 189 (1992), and references therein.
[CrossRef] [PubMed]

Other

J. Shah, Hot Carriers in Semiconductor Nanostructures: Physics and Applications (Academic, Boston, Mass., 1992), pp. 279–312.
[CrossRef]

F. G. Sun, X.-C. Zhang, and W. Ji, in Conference on Lasers and Electro-Optics (Optical Society of America, Washington, D.C., 2000), p. 479.

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Figures (4)

Fig. 1
Fig. 1

Schematic illustration of near-field THz imaging with a dynamic aperture: C, chopper; L’s, lenses; P, polarizers.

Fig. 2
Fig. 2

Variation of a THz signal with time delay between the THz beam and optical gating beam. Negative timing means that the optical gating pulse arrives later than the THz pulse.

Fig. 3
Fig. 3

THz images of a metal circuit deposited on a GaAs wafer, obtained by (a) the near-field technique with a dynamic aperture, (b) conventional THz imaging, and (c) the near-field technique with a dynamic aperture (the sample was flipped).

Fig. 4
Fig. 4

THz imaging of the word THz by the near-field technique with a dynamic aperture. The spatial resolution is better than 50 µm.

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