Abstract

Color-center formation in F-doped, OH-free synthetic SiO2 glasses by irradiation with F2 excimer lasers (157 nm) was examined as a function of the F content. The concentration of photoinduced E centers was reduced to 1/20 by 1 mol.% F2 doping and remained almost constant on further doping to 7.3 mol. %. The absorption edge was considerably shifted to a lower wavelength (157.4 nm153 nm for a 5-mm-thick sample) by 1-mol. % doping and decreased only slightly on further doping. The intensities of the Raman bands that are due to three- and four-membered ring structures were significantly reduced by 1-mol. % F doping. These results strongly suggest that elimination of strained Si—O—Si bonds by F doping plays a central role in the improvement of radiation resistance of SiO2 glasses to F2 laser light.

© 1999 Optical Society of America

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