Abstract

We fabricated a two-dimensional subwavelength structured (SWS) surface upon a crystal silicon substrate. The SWS surface was patterned by electron beam lithography and etched by an SF6 fast atom beam. The SWS grating had a conical profile, the period was 150 nm, and the groove was approximately 350 nm deep. The reflectivity was examined at 200–2500-nm wavelengths. At 400 nm the reflectivity decreased to 0.5% from the 54.7% of the silicon substrate. We also used He–Ne laser light to examine the reflectivity as a function of the incident angle.

© 1999 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. P. Lalanne and G. M. Morris, Proc. SPIE 2776, 300 (1996).
    [CrossRef]
  2. M. A. Green, J. Zhao, A. Wang, and S. R. Wenham, IEEE Electron. Dev. Lett. 13, 317 (1992).
    [CrossRef]
  3. R. C. Enger and S. K. Case, Appl. Opt. 22, 3220 (1983).
    [CrossRef]
  4. D. L. Brundrett, T. K. Gaylord, and E. N. Glytsis, Appl. Opt. 37, 2534 (1998).
    [CrossRef]
  5. S. J. Wilson and M. C. Hutley, Opt. Acta 29, 993 (1982).
    [CrossRef]
  6. P. Lalanne and G. M. Morris, Nanotechnology 8, 53 (1997).
    [CrossRef]
  7. R. Bräuer and O. Bryngdahl, Appl. Opt. 33, 7875 (1994).
    [CrossRef]
  8. E. B. Grann, M. G. Moharam, and D. A. Pommet, J. Opt. Soc. Am. A 12, 333 (1995).
    [CrossRef]
  9. Y. Toma, M. Hatakeyama, K. Ichiki, H. Huang, K. Yamauchi, K. Watanabe, and T. Kato, Jpn. J. Appl. Phys. 36, 7655 (1997).
    [CrossRef]
  10. Z. Yu, S. J. Schablitsky, and S. Y. Chou, Appl. Phys. Lett. 74, 2381 (1999).
    [CrossRef]

1999 (1)

Z. Yu, S. J. Schablitsky, and S. Y. Chou, Appl. Phys. Lett. 74, 2381 (1999).
[CrossRef]

1998 (1)

1997 (2)

P. Lalanne and G. M. Morris, Nanotechnology 8, 53 (1997).
[CrossRef]

Y. Toma, M. Hatakeyama, K. Ichiki, H. Huang, K. Yamauchi, K. Watanabe, and T. Kato, Jpn. J. Appl. Phys. 36, 7655 (1997).
[CrossRef]

1996 (1)

P. Lalanne and G. M. Morris, Proc. SPIE 2776, 300 (1996).
[CrossRef]

1995 (1)

1994 (1)

1992 (1)

M. A. Green, J. Zhao, A. Wang, and S. R. Wenham, IEEE Electron. Dev. Lett. 13, 317 (1992).
[CrossRef]

1983 (1)

1982 (1)

S. J. Wilson and M. C. Hutley, Opt. Acta 29, 993 (1982).
[CrossRef]

Bräuer, R.

Brundrett, D. L.

Bryngdahl, O.

Case, S. K.

Chou, S. Y.

Z. Yu, S. J. Schablitsky, and S. Y. Chou, Appl. Phys. Lett. 74, 2381 (1999).
[CrossRef]

Enger, R. C.

Gaylord, T. K.

Glytsis, E. N.

Grann, E. B.

Green, M. A.

M. A. Green, J. Zhao, A. Wang, and S. R. Wenham, IEEE Electron. Dev. Lett. 13, 317 (1992).
[CrossRef]

Hatakeyama, M.

Y. Toma, M. Hatakeyama, K. Ichiki, H. Huang, K. Yamauchi, K. Watanabe, and T. Kato, Jpn. J. Appl. Phys. 36, 7655 (1997).
[CrossRef]

Huang, H.

Y. Toma, M. Hatakeyama, K. Ichiki, H. Huang, K. Yamauchi, K. Watanabe, and T. Kato, Jpn. J. Appl. Phys. 36, 7655 (1997).
[CrossRef]

Hutley, M. C.

S. J. Wilson and M. C. Hutley, Opt. Acta 29, 993 (1982).
[CrossRef]

Ichiki, K.

Y. Toma, M. Hatakeyama, K. Ichiki, H. Huang, K. Yamauchi, K. Watanabe, and T. Kato, Jpn. J. Appl. Phys. 36, 7655 (1997).
[CrossRef]

Kato, T.

Y. Toma, M. Hatakeyama, K. Ichiki, H. Huang, K. Yamauchi, K. Watanabe, and T. Kato, Jpn. J. Appl. Phys. 36, 7655 (1997).
[CrossRef]

Lalanne, P.

P. Lalanne and G. M. Morris, Nanotechnology 8, 53 (1997).
[CrossRef]

P. Lalanne and G. M. Morris, Proc. SPIE 2776, 300 (1996).
[CrossRef]

Moharam, M. G.

Morris, G. M.

P. Lalanne and G. M. Morris, Nanotechnology 8, 53 (1997).
[CrossRef]

P. Lalanne and G. M. Morris, Proc. SPIE 2776, 300 (1996).
[CrossRef]

Pommet, D. A.

Schablitsky, S. J.

Z. Yu, S. J. Schablitsky, and S. Y. Chou, Appl. Phys. Lett. 74, 2381 (1999).
[CrossRef]

Toma, Y.

Y. Toma, M. Hatakeyama, K. Ichiki, H. Huang, K. Yamauchi, K. Watanabe, and T. Kato, Jpn. J. Appl. Phys. 36, 7655 (1997).
[CrossRef]

Wang, A.

M. A. Green, J. Zhao, A. Wang, and S. R. Wenham, IEEE Electron. Dev. Lett. 13, 317 (1992).
[CrossRef]

Watanabe, K.

Y. Toma, M. Hatakeyama, K. Ichiki, H. Huang, K. Yamauchi, K. Watanabe, and T. Kato, Jpn. J. Appl. Phys. 36, 7655 (1997).
[CrossRef]

Wenham, S. R.

M. A. Green, J. Zhao, A. Wang, and S. R. Wenham, IEEE Electron. Dev. Lett. 13, 317 (1992).
[CrossRef]

Wilson, S. J.

S. J. Wilson and M. C. Hutley, Opt. Acta 29, 993 (1982).
[CrossRef]

Yamauchi, K.

Y. Toma, M. Hatakeyama, K. Ichiki, H. Huang, K. Yamauchi, K. Watanabe, and T. Kato, Jpn. J. Appl. Phys. 36, 7655 (1997).
[CrossRef]

Yu, Z.

Z. Yu, S. J. Schablitsky, and S. Y. Chou, Appl. Phys. Lett. 74, 2381 (1999).
[CrossRef]

Zhao, J.

M. A. Green, J. Zhao, A. Wang, and S. R. Wenham, IEEE Electron. Dev. Lett. 13, 317 (1992).
[CrossRef]

Appl. Opt. (3)

Appl. Phys. Lett. (1)

Z. Yu, S. J. Schablitsky, and S. Y. Chou, Appl. Phys. Lett. 74, 2381 (1999).
[CrossRef]

IEEE Electron. Dev. Lett. (1)

M. A. Green, J. Zhao, A. Wang, and S. R. Wenham, IEEE Electron. Dev. Lett. 13, 317 (1992).
[CrossRef]

J. Opt. Soc. Am. A (1)

Jpn. J. Appl. Phys. (1)

Y. Toma, M. Hatakeyama, K. Ichiki, H. Huang, K. Yamauchi, K. Watanabe, and T. Kato, Jpn. J. Appl. Phys. 36, 7655 (1997).
[CrossRef]

Nanotechnology (1)

P. Lalanne and G. M. Morris, Nanotechnology 8, 53 (1997).
[CrossRef]

Opt. Acta (1)

S. J. Wilson and M. C. Hutley, Opt. Acta 29, 993 (1982).
[CrossRef]

Proc. SPIE (1)

P. Lalanne and G. M. Morris, Proc. SPIE 2776, 300 (1996).
[CrossRef]

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (4)

Fig. 1
Fig. 1

Steps in the fabrication of a SWS surface.

Fig. 2
Fig. 2

Scanning-electron micrograph of the SWS surface. The grating period is 150 nm, and the grooves are 350 nm deep.

Fig. 3
Fig. 3

Wavelength dependence of the measured reflectivity.

Fig. 4
Fig. 4

Reflectivity as a function of incident angle. Measured reflectivities for the SWS surface and results calculated for the polished silicon substrate are shown. The latter agree well with the measured values (not shown).

Metrics