Abstract

Amorphous xGeO21-xSiO2 thin films exhibit large negative index changes (4–8%) in the high GeO2 region x>0.25 on irradiation with ArF laser pulses. The sign of the index change is opposite the low GeO2 region X<0.25, and the magnitude of the index change is larger by an order of magnitude than that reported so far. Cross-sectional transmission electron microscope observation has revealed that nanometer-scale phase separation is induced in these highly photosensitive glasses by irradiation with ArF excimer laser light pulses or electron beams. This is a first finding of microphase separation in SiO2GeO2 glasses by irradiation and provides an essential constraint on the modeling of photonic effects induced by irradiation in these glasses.

© 1999 Optical Society of America

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