Abstract

An intracavity frequency-doubling scheme was merged with an actively mode-locked AlGaInP laser diode with an external cavity to provide efficient generation of 335-nm ultraviolet light. Intense pulses of $<16 \mathrm{ps}$ were successfully generated inside the cavity at subgigahertz repetition frequencies. We applied those pulses to intracavity second-harmonic generation from a 5-mm-long ${\mathrm{LiIO}}_3$ crystal, which resulted in average ultraviolet power of $70 \mathit{\mu }\mathrm{W}$ for an average fundamental power of 73 mW.

© 1999 Optical Society of America

Efficient ultraviolet-light (345-nm) generation in a bulk LiIO₃ crystal by frequency doubling of a self-seeded gain-switched AlGaInP Fabry–Perot semiconductor laser

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Opt. Lett. 22(2) 78-90 (1997)

High-power 390-nm laser source based on efficient frequency doubling of a tapered diode laser in an external resonant cavity

J. D. Bhawalkar, Y. Mao, H. Po, A. K. Goyal, P. Gavrilovic, Y. Conturie, and S. Singh
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Intracavity frequency doubling of a diode-pumped external-cavity surface-emitting semiconductor laser

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Continuous-wave quasi-phase-matched generation of 60 mW at 465 nm by single-pass frequency doubling of a laser diode in backswitch-poled lithium niobate

Robert G. Batchko, Martin M. Fejer, Robert L. Byer, Dirk Woll, Richard Wallenstein, Vladimir Y. Shur, and Levent Erman
Opt. Lett. 24(18) 1293-1295 (1999)

High-power diode-pumped Q-switched intracavity frequency-doubled Nd:YVO₄ laser with a sandwich-type resonator

Yung-Fu Chen
Opt. Lett. 24(15) 1032-1034 (1999)