Abstract

F2 excimer-laser irradiation induces two major changes in SiO2:OH glass impregnated with H2 molecules. First, the vacuum–UV optical absorption edge is bleached, and the absorption at 157 nm decreases from 0.95 to 0.68 cm-1. Second, preexisting free SiOH groups and interstitial H2 are photochemically converted to hydrogen-bonded hydroxyl groups. It is suggested that the bleaching of the UV-absorption edge is caused by a change of OH groups from a free to a hydrogen-bonded state and by photolysis of distorted Si—O bonds that are absorbing in the edge region.

© 1999 Optical Society of America

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  1. H. Hosono, M. Mizuguchi, H. Kawazoe, and T. Ogawa, Appl. Phys. Lett. 74, 2755 (1999).
    [CrossRef]
  2. N. Kamisugi, N. Kuzuu, Y. Ihara, and T. Nakamura, Jpn. J. Appl. Phys. 36, 6785 (1997).
    [CrossRef]
  3. S. Yamagata, Miner. J. 15, 333 (1991).
    [CrossRef]
  4. H. Imai, K. Arai, T. Saito, S. Ichimura, H. Nonaka, J. P. Vigouroux, H. Imagawa, H. Hosono, and Y. Abe, in The Physics and Technology of Amorphous SiO2R. A. B. Devine, ed. (Plenum, New York, 1988), p. 153.
  5. Y. Morimoto, S. Nozawa, and H. Hosono, Phys. Rev. B 59, 4066 (1999).
    [CrossRef]
  6. K. Nagasawa, R. Tohmon, and Y. Ohki, Jpn. J. Appl. Phys. 26, 148 (1987); L. Skuja, J. Non-Cryst. Solids 179, 51 (1994), and references therein.
    [CrossRef]
  7. R. A. Weeks and E. Sonder, in Paramagnetic Resonance II, W. Low, ed. (Academic, New York, 1963), p. 869; for a recent review, see also L. Skuja, J. Non-Cryst. Solids 239, 16 (1998).
    [CrossRef]
  8. C. M. Hartwig and J. Vitko, Phys. Rev. B 18, 3006 (1978).
    [CrossRef]
  9. H. Tsubomura, J. Chem. Phys. 24, 927 (1956).
    [CrossRef]
  10. G. E. Walrafen and S. R. Samanta, J. Chem. Phys. 69, 493 (1978).
    [CrossRef]
  11. J. E. Shelby, J. Vitko, and R. E. Benner, Commun. Am. Ceram. Soc. 6, C59 (1982).
    [CrossRef]
  12. J. E. Shelby, J. Appl. Phys. 48, 3387 (1977).
    [CrossRef]
  13. I. Godmanis and A. N. Trukhin, Phys. Status Solidi B 116, 279 (1983).
    [CrossRef]
  14. R. A. B. Devine, R. Dupree, I. Farnan, and J. J. Capponi, Phys. Rev. B 35, 2560 (1987).
    [CrossRef]
  15. N. Kitamura, K. Fukumo, K. Kadono, H. Yamashita, and K. Suito, Phys. Rev. B 50, 132 (1994).
    [CrossRef]
  16. H. Nishikawa, R. Nakamura, Y. Ohki, and Y. Hama, Phys. Rev. B 48, 15584 (1993).
    [CrossRef]
  17. G. Pacchioni and G. Ierano, Phys. Rev. B 57, 818 (1998).
    [CrossRef]

1999 (2)

Y. Morimoto, S. Nozawa, and H. Hosono, Phys. Rev. B 59, 4066 (1999).
[CrossRef]

H. Hosono, M. Mizuguchi, H. Kawazoe, and T. Ogawa, Appl. Phys. Lett. 74, 2755 (1999).
[CrossRef]

1998 (1)

G. Pacchioni and G. Ierano, Phys. Rev. B 57, 818 (1998).
[CrossRef]

1997 (1)

N. Kamisugi, N. Kuzuu, Y. Ihara, and T. Nakamura, Jpn. J. Appl. Phys. 36, 6785 (1997).
[CrossRef]

1994 (1)

N. Kitamura, K. Fukumo, K. Kadono, H. Yamashita, and K. Suito, Phys. Rev. B 50, 132 (1994).
[CrossRef]

1993 (1)

H. Nishikawa, R. Nakamura, Y. Ohki, and Y. Hama, Phys. Rev. B 48, 15584 (1993).
[CrossRef]

1991 (1)

S. Yamagata, Miner. J. 15, 333 (1991).
[CrossRef]

1987 (2)

K. Nagasawa, R. Tohmon, and Y. Ohki, Jpn. J. Appl. Phys. 26, 148 (1987); L. Skuja, J. Non-Cryst. Solids 179, 51 (1994), and references therein.
[CrossRef]

R. A. B. Devine, R. Dupree, I. Farnan, and J. J. Capponi, Phys. Rev. B 35, 2560 (1987).
[CrossRef]

1983 (1)

I. Godmanis and A. N. Trukhin, Phys. Status Solidi B 116, 279 (1983).
[CrossRef]

1982 (1)

J. E. Shelby, J. Vitko, and R. E. Benner, Commun. Am. Ceram. Soc. 6, C59 (1982).
[CrossRef]

1978 (2)

C. M. Hartwig and J. Vitko, Phys. Rev. B 18, 3006 (1978).
[CrossRef]

G. E. Walrafen and S. R. Samanta, J. Chem. Phys. 69, 493 (1978).
[CrossRef]

1977 (1)

J. E. Shelby, J. Appl. Phys. 48, 3387 (1977).
[CrossRef]

1956 (1)

H. Tsubomura, J. Chem. Phys. 24, 927 (1956).
[CrossRef]

Abe, Y.

H. Imai, K. Arai, T. Saito, S. Ichimura, H. Nonaka, J. P. Vigouroux, H. Imagawa, H. Hosono, and Y. Abe, in The Physics and Technology of Amorphous SiO2R. A. B. Devine, ed. (Plenum, New York, 1988), p. 153.

Arai, K.

H. Imai, K. Arai, T. Saito, S. Ichimura, H. Nonaka, J. P. Vigouroux, H. Imagawa, H. Hosono, and Y. Abe, in The Physics and Technology of Amorphous SiO2R. A. B. Devine, ed. (Plenum, New York, 1988), p. 153.

Benner, R. E.

J. E. Shelby, J. Vitko, and R. E. Benner, Commun. Am. Ceram. Soc. 6, C59 (1982).
[CrossRef]

Capponi, J. J.

R. A. B. Devine, R. Dupree, I. Farnan, and J. J. Capponi, Phys. Rev. B 35, 2560 (1987).
[CrossRef]

Devine, R. A. B.

R. A. B. Devine, R. Dupree, I. Farnan, and J. J. Capponi, Phys. Rev. B 35, 2560 (1987).
[CrossRef]

Dupree, R.

R. A. B. Devine, R. Dupree, I. Farnan, and J. J. Capponi, Phys. Rev. B 35, 2560 (1987).
[CrossRef]

Farnan, I.

R. A. B. Devine, R. Dupree, I. Farnan, and J. J. Capponi, Phys. Rev. B 35, 2560 (1987).
[CrossRef]

Fukumo, K.

N. Kitamura, K. Fukumo, K. Kadono, H. Yamashita, and K. Suito, Phys. Rev. B 50, 132 (1994).
[CrossRef]

Godmanis, I.

I. Godmanis and A. N. Trukhin, Phys. Status Solidi B 116, 279 (1983).
[CrossRef]

Hama, Y.

H. Nishikawa, R. Nakamura, Y. Ohki, and Y. Hama, Phys. Rev. B 48, 15584 (1993).
[CrossRef]

Hartwig, C. M.

C. M. Hartwig and J. Vitko, Phys. Rev. B 18, 3006 (1978).
[CrossRef]

Hosono, H.

Y. Morimoto, S. Nozawa, and H. Hosono, Phys. Rev. B 59, 4066 (1999).
[CrossRef]

H. Hosono, M. Mizuguchi, H. Kawazoe, and T. Ogawa, Appl. Phys. Lett. 74, 2755 (1999).
[CrossRef]

H. Imai, K. Arai, T. Saito, S. Ichimura, H. Nonaka, J. P. Vigouroux, H. Imagawa, H. Hosono, and Y. Abe, in The Physics and Technology of Amorphous SiO2R. A. B. Devine, ed. (Plenum, New York, 1988), p. 153.

Ichimura, S.

H. Imai, K. Arai, T. Saito, S. Ichimura, H. Nonaka, J. P. Vigouroux, H. Imagawa, H. Hosono, and Y. Abe, in The Physics and Technology of Amorphous SiO2R. A. B. Devine, ed. (Plenum, New York, 1988), p. 153.

Ierano, G.

G. Pacchioni and G. Ierano, Phys. Rev. B 57, 818 (1998).
[CrossRef]

Ihara, Y.

N. Kamisugi, N. Kuzuu, Y. Ihara, and T. Nakamura, Jpn. J. Appl. Phys. 36, 6785 (1997).
[CrossRef]

Imagawa, H.

H. Imai, K. Arai, T. Saito, S. Ichimura, H. Nonaka, J. P. Vigouroux, H. Imagawa, H. Hosono, and Y. Abe, in The Physics and Technology of Amorphous SiO2R. A. B. Devine, ed. (Plenum, New York, 1988), p. 153.

Imai, H.

H. Imai, K. Arai, T. Saito, S. Ichimura, H. Nonaka, J. P. Vigouroux, H. Imagawa, H. Hosono, and Y. Abe, in The Physics and Technology of Amorphous SiO2R. A. B. Devine, ed. (Plenum, New York, 1988), p. 153.

Kadono, K.

N. Kitamura, K. Fukumo, K. Kadono, H. Yamashita, and K. Suito, Phys. Rev. B 50, 132 (1994).
[CrossRef]

Kamisugi, N.

N. Kamisugi, N. Kuzuu, Y. Ihara, and T. Nakamura, Jpn. J. Appl. Phys. 36, 6785 (1997).
[CrossRef]

Kawazoe, H.

H. Hosono, M. Mizuguchi, H. Kawazoe, and T. Ogawa, Appl. Phys. Lett. 74, 2755 (1999).
[CrossRef]

Kitamura, N.

N. Kitamura, K. Fukumo, K. Kadono, H. Yamashita, and K. Suito, Phys. Rev. B 50, 132 (1994).
[CrossRef]

Kuzuu, N.

N. Kamisugi, N. Kuzuu, Y. Ihara, and T. Nakamura, Jpn. J. Appl. Phys. 36, 6785 (1997).
[CrossRef]

Mizuguchi, M.

H. Hosono, M. Mizuguchi, H. Kawazoe, and T. Ogawa, Appl. Phys. Lett. 74, 2755 (1999).
[CrossRef]

Morimoto, Y.

Y. Morimoto, S. Nozawa, and H. Hosono, Phys. Rev. B 59, 4066 (1999).
[CrossRef]

Nagasawa, K.

K. Nagasawa, R. Tohmon, and Y. Ohki, Jpn. J. Appl. Phys. 26, 148 (1987); L. Skuja, J. Non-Cryst. Solids 179, 51 (1994), and references therein.
[CrossRef]

Nakamura, R.

H. Nishikawa, R. Nakamura, Y. Ohki, and Y. Hama, Phys. Rev. B 48, 15584 (1993).
[CrossRef]

Nakamura, T.

N. Kamisugi, N. Kuzuu, Y. Ihara, and T. Nakamura, Jpn. J. Appl. Phys. 36, 6785 (1997).
[CrossRef]

Nishikawa, H.

H. Nishikawa, R. Nakamura, Y. Ohki, and Y. Hama, Phys. Rev. B 48, 15584 (1993).
[CrossRef]

Nonaka, H.

H. Imai, K. Arai, T. Saito, S. Ichimura, H. Nonaka, J. P. Vigouroux, H. Imagawa, H. Hosono, and Y. Abe, in The Physics and Technology of Amorphous SiO2R. A. B. Devine, ed. (Plenum, New York, 1988), p. 153.

Nozawa, S.

Y. Morimoto, S. Nozawa, and H. Hosono, Phys. Rev. B 59, 4066 (1999).
[CrossRef]

Ogawa, T.

H. Hosono, M. Mizuguchi, H. Kawazoe, and T. Ogawa, Appl. Phys. Lett. 74, 2755 (1999).
[CrossRef]

Ohki, Y.

H. Nishikawa, R. Nakamura, Y. Ohki, and Y. Hama, Phys. Rev. B 48, 15584 (1993).
[CrossRef]

K. Nagasawa, R. Tohmon, and Y. Ohki, Jpn. J. Appl. Phys. 26, 148 (1987); L. Skuja, J. Non-Cryst. Solids 179, 51 (1994), and references therein.
[CrossRef]

Pacchioni, G.

G. Pacchioni and G. Ierano, Phys. Rev. B 57, 818 (1998).
[CrossRef]

Saito, T.

H. Imai, K. Arai, T. Saito, S. Ichimura, H. Nonaka, J. P. Vigouroux, H. Imagawa, H. Hosono, and Y. Abe, in The Physics and Technology of Amorphous SiO2R. A. B. Devine, ed. (Plenum, New York, 1988), p. 153.

Samanta, S. R.

G. E. Walrafen and S. R. Samanta, J. Chem. Phys. 69, 493 (1978).
[CrossRef]

Shelby, J. E.

J. E. Shelby, J. Vitko, and R. E. Benner, Commun. Am. Ceram. Soc. 6, C59 (1982).
[CrossRef]

J. E. Shelby, J. Appl. Phys. 48, 3387 (1977).
[CrossRef]

Sonder, E.

R. A. Weeks and E. Sonder, in Paramagnetic Resonance II, W. Low, ed. (Academic, New York, 1963), p. 869; for a recent review, see also L. Skuja, J. Non-Cryst. Solids 239, 16 (1998).
[CrossRef]

Suito, K.

N. Kitamura, K. Fukumo, K. Kadono, H. Yamashita, and K. Suito, Phys. Rev. B 50, 132 (1994).
[CrossRef]

Tohmon, R.

K. Nagasawa, R. Tohmon, and Y. Ohki, Jpn. J. Appl. Phys. 26, 148 (1987); L. Skuja, J. Non-Cryst. Solids 179, 51 (1994), and references therein.
[CrossRef]

Trukhin, A. N.

I. Godmanis and A. N. Trukhin, Phys. Status Solidi B 116, 279 (1983).
[CrossRef]

Tsubomura, H.

H. Tsubomura, J. Chem. Phys. 24, 927 (1956).
[CrossRef]

Vigouroux, J. P.

H. Imai, K. Arai, T. Saito, S. Ichimura, H. Nonaka, J. P. Vigouroux, H. Imagawa, H. Hosono, and Y. Abe, in The Physics and Technology of Amorphous SiO2R. A. B. Devine, ed. (Plenum, New York, 1988), p. 153.

Vitko, J.

J. E. Shelby, J. Vitko, and R. E. Benner, Commun. Am. Ceram. Soc. 6, C59 (1982).
[CrossRef]

C. M. Hartwig and J. Vitko, Phys. Rev. B 18, 3006 (1978).
[CrossRef]

Walrafen, G. E.

G. E. Walrafen and S. R. Samanta, J. Chem. Phys. 69, 493 (1978).
[CrossRef]

Weeks, R. A.

R. A. Weeks and E. Sonder, in Paramagnetic Resonance II, W. Low, ed. (Academic, New York, 1963), p. 869; for a recent review, see also L. Skuja, J. Non-Cryst. Solids 239, 16 (1998).
[CrossRef]

Yamagata, S.

S. Yamagata, Miner. J. 15, 333 (1991).
[CrossRef]

Yamashita, H.

N. Kitamura, K. Fukumo, K. Kadono, H. Yamashita, and K. Suito, Phys. Rev. B 50, 132 (1994).
[CrossRef]

Appl. Phys. Lett. (1)

H. Hosono, M. Mizuguchi, H. Kawazoe, and T. Ogawa, Appl. Phys. Lett. 74, 2755 (1999).
[CrossRef]

Commun. Am. Ceram. Soc. (1)

J. E. Shelby, J. Vitko, and R. E. Benner, Commun. Am. Ceram. Soc. 6, C59 (1982).
[CrossRef]

J. Appl. Phys. (1)

J. E. Shelby, J. Appl. Phys. 48, 3387 (1977).
[CrossRef]

J. Chem. Phys. (2)

H. Tsubomura, J. Chem. Phys. 24, 927 (1956).
[CrossRef]

G. E. Walrafen and S. R. Samanta, J. Chem. Phys. 69, 493 (1978).
[CrossRef]

Jpn. J. Appl. Phys. (2)

N. Kamisugi, N. Kuzuu, Y. Ihara, and T. Nakamura, Jpn. J. Appl. Phys. 36, 6785 (1997).
[CrossRef]

K. Nagasawa, R. Tohmon, and Y. Ohki, Jpn. J. Appl. Phys. 26, 148 (1987); L. Skuja, J. Non-Cryst. Solids 179, 51 (1994), and references therein.
[CrossRef]

Miner. J. (1)

S. Yamagata, Miner. J. 15, 333 (1991).
[CrossRef]

Phys. Rev. B (6)

Y. Morimoto, S. Nozawa, and H. Hosono, Phys. Rev. B 59, 4066 (1999).
[CrossRef]

C. M. Hartwig and J. Vitko, Phys. Rev. B 18, 3006 (1978).
[CrossRef]

R. A. B. Devine, R. Dupree, I. Farnan, and J. J. Capponi, Phys. Rev. B 35, 2560 (1987).
[CrossRef]

N. Kitamura, K. Fukumo, K. Kadono, H. Yamashita, and K. Suito, Phys. Rev. B 50, 132 (1994).
[CrossRef]

H. Nishikawa, R. Nakamura, Y. Ohki, and Y. Hama, Phys. Rev. B 48, 15584 (1993).
[CrossRef]

G. Pacchioni and G. Ierano, Phys. Rev. B 57, 818 (1998).
[CrossRef]

Phys. Status Solidi B (1)

I. Godmanis and A. N. Trukhin, Phys. Status Solidi B 116, 279 (1983).
[CrossRef]

Other (2)

R. A. Weeks and E. Sonder, in Paramagnetic Resonance II, W. Low, ed. (Academic, New York, 1963), p. 869; for a recent review, see also L. Skuja, J. Non-Cryst. Solids 239, 16 (1998).
[CrossRef]

H. Imai, K. Arai, T. Saito, S. Ichimura, H. Nonaka, J. P. Vigouroux, H. Imagawa, H. Hosono, and Y. Abe, in The Physics and Technology of Amorphous SiO2R. A. B. Devine, ed. (Plenum, New York, 1988), p. 153.

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Figures (3)

Fig. 1
Fig. 1

(a) Intense red PL emitted from the sample during irradiation with an F2 excimer laser and (b) its spectrum.

Fig. 2
Fig. 2

Effect of F2-laser irradiation on the VUV–UV optical transmission spectra of silica. The solid and the dashed curves show the transmission spectra before and after irradiation, respectively. The dashed line indicates the laser wavelength of 157 nm. Surface-reflection loss at 157 nm is 13%. Inset: the laser-induced visible–VUV absorption spectrum. A negative absorption coefficient corresponds to an increase in transmission after irradiation.

Fig. 3
Fig. 3

IR absorption spectra of Si—O—H groups and Raman band of interstitial H2 (inset) before and after laser irradiation. The intensities of the H2 Raman band were normalized relative to the lattice vibration band at 800 cm-1.

Equations (2)

Equations on this page are rendered with MathJax. Learn more.

SiOSi+H2+hν7.9 eVSiOH+HSi,
SiOH+hν7.9 eVSiO+H.

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