Abstract

High holographic storage capacity of paraelectric K1xLixTa1−yNbyO3:Cu,V using the voltage-controlled photorefractive effect is experimentally demonstrated. Measurements of the M/# for various writing angles and reading fields are presented. In particular, it is shown that 128 angularly multiplexed holograms, written by two plane-wave beams separated by an angle of 8°, yield an M/# of 20.

© 1998 Optical Society of America

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