Abstract

We present measurements at 10.6 µm that demonstrate electronic tuning of the polarization response of asymmetric-spiral infrared antennas connected to Ni–NiO–Ni diodes. Continuous variation of the bias voltage applied to the diode results in a rotation of the principal axis of the polarization ellipse of the spiral antenna. A 90° tuning range is measured for a bias voltage that varies from -160 to +160 mV. This effect is caused by a small asymmetry of the deposited diode contact or by a variation of the detector capacitance with the applied bias voltage.

© 1998 Optical Society of America

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References

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  1. C. Fumeaux, W. Herrmann, F. K. Kneubühl, and H. Rothuizen, Infrared Phys. Technol. 39, 123 (1998).
    [CrossRef]
  2. C. Fumeaux, G. D. Boreman, W. Herrmann, H. Rothuizen, and F. K. Kneubühl, Appl. Opt. 36, 6485 (1997).
    [CrossRef]
  3. V. K. Reddy and D. P. Neikirk, Electron. Lett. 29, 464 (1993).
    [CrossRef]
  4. S. M. Sze, D. J. Coleman, and A. Loya, Solid-State Electron. 14, 1209 (1971).
    [CrossRef]

1998

C. Fumeaux, W. Herrmann, F. K. Kneubühl, and H. Rothuizen, Infrared Phys. Technol. 39, 123 (1998).
[CrossRef]

1997

1993

V. K. Reddy and D. P. Neikirk, Electron. Lett. 29, 464 (1993).
[CrossRef]

1971

S. M. Sze, D. J. Coleman, and A. Loya, Solid-State Electron. 14, 1209 (1971).
[CrossRef]

Boreman, G. D.

Coleman, D. J.

S. M. Sze, D. J. Coleman, and A. Loya, Solid-State Electron. 14, 1209 (1971).
[CrossRef]

Fumeaux, C.

C. Fumeaux, W. Herrmann, F. K. Kneubühl, and H. Rothuizen, Infrared Phys. Technol. 39, 123 (1998).
[CrossRef]

C. Fumeaux, G. D. Boreman, W. Herrmann, H. Rothuizen, and F. K. Kneubühl, Appl. Opt. 36, 6485 (1997).
[CrossRef]

Herrmann, W.

C. Fumeaux, W. Herrmann, F. K. Kneubühl, and H. Rothuizen, Infrared Phys. Technol. 39, 123 (1998).
[CrossRef]

C. Fumeaux, G. D. Boreman, W. Herrmann, H. Rothuizen, and F. K. Kneubühl, Appl. Opt. 36, 6485 (1997).
[CrossRef]

Kneubühl, F. K.

C. Fumeaux, W. Herrmann, F. K. Kneubühl, and H. Rothuizen, Infrared Phys. Technol. 39, 123 (1998).
[CrossRef]

C. Fumeaux, G. D. Boreman, W. Herrmann, H. Rothuizen, and F. K. Kneubühl, Appl. Opt. 36, 6485 (1997).
[CrossRef]

Loya, A.

S. M. Sze, D. J. Coleman, and A. Loya, Solid-State Electron. 14, 1209 (1971).
[CrossRef]

Neikirk, D. P.

V. K. Reddy and D. P. Neikirk, Electron. Lett. 29, 464 (1993).
[CrossRef]

Reddy, V. K.

V. K. Reddy and D. P. Neikirk, Electron. Lett. 29, 464 (1993).
[CrossRef]

Rothuizen, H.

C. Fumeaux, W. Herrmann, F. K. Kneubühl, and H. Rothuizen, Infrared Phys. Technol. 39, 123 (1998).
[CrossRef]

C. Fumeaux, G. D. Boreman, W. Herrmann, H. Rothuizen, and F. K. Kneubühl, Appl. Opt. 36, 6485 (1997).
[CrossRef]

Sze, S. M.

S. M. Sze, D. J. Coleman, and A. Loya, Solid-State Electron. 14, 1209 (1971).
[CrossRef]

Appl. Opt.

Electron. Lett.

V. K. Reddy and D. P. Neikirk, Electron. Lett. 29, 464 (1993).
[CrossRef]

Infrared Phys. Technol.

C. Fumeaux, W. Herrmann, F. K. Kneubühl, and H. Rothuizen, Infrared Phys. Technol. 39, 123 (1998).
[CrossRef]

Solid-State Electron.

S. M. Sze, D. J. Coleman, and A. Loya, Solid-State Electron. 14, 1209 (1971).
[CrossRef]

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Figures (4)

Fig. 1
Fig. 1

Electron micrograph of a Ni–NiO–Ni diode with an integrated asymmetric spiral antenna.

Fig. 2
Fig. 2

Polarization dependence of the Ni–NiO–Ni diode response at a bias voltage of 4.8 mV. Fitting of the curve permits determination of θ0. In the fitting function, Vp represents the polarization-dependent part of the signal (antenna signal) and Vip represents the polarization-independent part of the signal (partly thermal).

Fig. 3
Fig. 3

Orientation θ0 of the principal axis of the polarization ellipse of the spiral antenna as a function of the bias voltage. The measured amplitude Vp of the polarization-dependent part of the diode signal is also plotted and is related to the right-hand axis.

Fig. 4
Fig. 4

Top, bias voltage dependence of mode amplitudes U and B used in the simulation of Fig. 3. Bottom, corresponding bias voltage dependence of mode ratio U/B.

Equations (3)

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BVbias=AB×Vbias-VB-0,
UVbias=AU×Vbias-VU-0.
UBVbias=AU×Vbias-VU-0AB×Vbias-VB-0,UB±AUAB=0.75.

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