Abstract

Based on a multi-three-wave mixing model, we theoretically study the resistance against light-induced scattering in LiNbO3:M (M=Mg2+, Zn2+, In3+, Sc3+) crystals. We have simulated the intensity angular distribution of light-induced scatterings. We have also shown that the total light-induced scattering will be much less than 1% of the incident light intensity when the photovoltaic field Eph is less than 4.0×106 V/m. Phase gratings and signal beams can still be formed and amplified effectively in LiNbO3:M crystals, with Eph less than 4.0×106 V/m.

© 1997 Optical Society of America

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