Abstract

We document the lasing performance of a waveguiding layer of Ti:sapphire, of 12-µm thickness, grown by pulsed laser deposition from a 0.12–wt. % Ti2O3 Ti:sapphire single-crystal target onto an undoped z-cut sapphire substrate. Lasing around 800  nm is observed when the waveguide layer is pumped by an argon-ion laser running on all-blue-green lines, with an absorbed power threshold of 0.56  W, with high-reflectivity R>98% mirrors. With a 5% pump duty cycle and a T=35% output coupler, a slope efficiency of 26% with respect to absorbed power is obtained, giving quasi-cw output powers in excess of 350  mW.

© 1997 Optical Society of America

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