Abstract

We investigate the effect of the electric-field profile on the gain–bandwidth product of avalanche photodetectors with separate absorption and multiplication. We show that for a given multiplication layer thickness the electric-field profile plays an important role in determining the gain–bandwidth product. The calculation results show that an increasing triangular electric-field profile yields a larger gain–bandwidth product than most other profiles for Si/InGaAs avalanche photodetectors.

© 1997 Optical Society of America

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