Abstract

Persistent spectral-hole burning was performed in the γ line of V4+ in the wide-gap semiconductor 6H–SiC. Spectral holes burned at 11 K were stable to temperatures of at least 320 K for several days. The hole-burning mechanism consists of two-step photoionization of V 4+ (self-gated spectral-hole burning). The spectral holes could be erased optically, either by pumping of electrons back from stable traps or, presumably, by a charge-transfer transition from the valence band to the V5+ ions.

© 1997 Optical Society of America

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