Abstract

A molecular-beam-epitaxy-grown semiconductor saturable absorber mirror with integrated dispersion compensation, based on a Gires–Tournois structure, is demonstrated. This dispersion-compensating saturable absorber mirror generated 160-fs pulses with 25-mW average power from a simple diode-pumped Cr:LiSrAlF6 laser without any additional dispersion compensation.

© 1996 Optical Society of America

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