Abstract

Two-photon excitation of carriers in boron E′-center-containing borosilicate glasses results in a photoencoding of selectively etchable regions. Using a turbulent etching process followed by polishing, we have demonstrated a number of patterning capabilities for microtechnology applications such as ultrafast capillary electrophoresis chips and rapid prototyping of diffractive optical elements.

© 1996 Optical Society of America

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References

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  1. E. Sauvain, J. H. Kyung, N. M. Lawandy, Opt. Lett. 20, 243 (1995).
    [CrossRef] [PubMed]
  2. D. L. Griscom, G. H. Sigel, R. J. Ginther, J. Appl. Phys. 47, 3 (1976).
    [CrossRef]
  3. A. T. Woolley, R. A. Mathies, Proc. Natl. Acad. Sci. USA 91, 11348 (1994).
    [CrossRef] [PubMed]

1995 (1)

1994 (1)

A. T. Woolley, R. A. Mathies, Proc. Natl. Acad. Sci. USA 91, 11348 (1994).
[CrossRef] [PubMed]

1976 (1)

D. L. Griscom, G. H. Sigel, R. J. Ginther, J. Appl. Phys. 47, 3 (1976).
[CrossRef]

Ginther, R. J.

D. L. Griscom, G. H. Sigel, R. J. Ginther, J. Appl. Phys. 47, 3 (1976).
[CrossRef]

Griscom, D. L.

D. L. Griscom, G. H. Sigel, R. J. Ginther, J. Appl. Phys. 47, 3 (1976).
[CrossRef]

Kyung, J. H.

Lawandy, N. M.

Mathies, R. A.

A. T. Woolley, R. A. Mathies, Proc. Natl. Acad. Sci. USA 91, 11348 (1994).
[CrossRef] [PubMed]

Sauvain, E.

Sigel, G. H.

D. L. Griscom, G. H. Sigel, R. J. Ginther, J. Appl. Phys. 47, 3 (1976).
[CrossRef]

Woolley, A. T.

A. T. Woolley, R. A. Mathies, Proc. Natl. Acad. Sci. USA 91, 11348 (1994).
[CrossRef] [PubMed]

J. Appl. Phys. (1)

D. L. Griscom, G. H. Sigel, R. J. Ginther, J. Appl. Phys. 47, 3 (1976).
[CrossRef]

Opt. Lett. (1)

Proc. Natl. Acad. Sci. USA (1)

A. T. Woolley, R. A. Mathies, Proc. Natl. Acad. Sci. USA 91, 11348 (1994).
[CrossRef] [PubMed]

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Figures (4)

Fig. 1
Fig. 1

Measurement of the selective etching depth and ESR intensity data of boron E' centers2 in borosilicate glasses at various annealing temperatures. The selectivity etched depth relative to the unexposed background etched surface was measured by a contact atomic force microscope in the topographic mode. Each sample was preexposed and annealed for 10 min at various temperatures and subsequently etched.

Fig. 2
Fig. 2

(a) Contact AFM topographic image of a channel fabricated on SK5 glass substrate. Spikes in the image are noise pick-up from the AFM electronics. (b) A profile of the channel shown in (a).

Fig. 3
Fig. 3

Contact AFM topographic image of a series of lines produced in SK5 glass substrate with an XY stage.

Fig. 4
Fig. 4

Optical microscope image of a 4 × 4 array of holes produced by a spot generator phase mask and a close-up AFM image and profile of one of the holes.

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