Abstract

We passively Q switched a monolithic Nd:YAG ring laser [monolithic isolated single-mode end-pumped ring laser (MISER)] using an evanescent-wave coupled antiresonant Fabry–Perot saturable absorber. Single-frequency, 0.7-μJ pulses with a pulse width below 100 ns at an ≈1-MHz repetition rate are demonstrated. Pulse width and repetition rate can be varied by changing the distance and thus the coupling strength between the crystal and the absorber.

© 1995 Optical Society of America

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References

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  4. U. Keller, D. A. B. Miller, G. D. Boyd, T. H. Chiu, J. F. Ferguson, M. T. Asom, Opt. Lett. 17, 505 (1992).
    [CrossRef] [PubMed]
  5. U. Keller, Appl. Phys. B 58, 347 (1994).
    [CrossRef]
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    [CrossRef]
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    [PubMed]
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1995

1994

1993

1992

1985

1976

H. A. Haus, IEEE J. Quantum Electron. QE-12, 169 (1976).
[CrossRef]

Asom, M. T.

Boyd, G. D.

Braun, B.

K. J. Weingarten, B. Braun, U. Keller, Opt. Lett. 19, 1140 (1994).
[PubMed]

B. Braun, F. X. Kärtner, U. Keller, J.-P. Meyn, G. Huber, T. H. Chiu, in Digest of Conference on Advanced Solid-State Lasers (Optical Society of America, Washington, D.C., 1995), paper ThB1.

B. Braun, U. Keller, in Conference on Lasers and Electro-Optics, Vol. 8 of 1994 OSA Technical Digest Series (Optical Society of America, Washington, D.C., 1994), paper CPD20.

Brovelli, L. R.

L. R. Brovelli, U. Keller, T. H. Chiu, J. Opt. Soc. Am. B 12, 311 (1995).
[CrossRef]

F. X. Kärtner, L. R. Brovelli, D. Kopf, M. Kamp, I. Calasso, U. Keller, “Control of solid-state laser dynamics by semiconductor devices,” Opt. Eng. (to be published), Eq. II.6.

Byer, R. L.

Calasso, I.

F. X. Kärtner, L. R. Brovelli, D. Kopf, M. Kamp, I. Calasso, U. Keller, “Control of solid-state laser dynamics by semiconductor devices,” Opt. Eng. (to be published), Eq. II.6.

Chen, Y. C.

Chiu, T. H.

L. R. Brovelli, U. Keller, T. H. Chiu, J. Opt. Soc. Am. B 12, 311 (1995).
[CrossRef]

U. Keller, D. A. B. Miller, G. D. Boyd, T. H. Chiu, J. F. Ferguson, M. T. Asom, Opt. Lett. 17, 505 (1992).
[CrossRef] [PubMed]

B. Braun, F. X. Kärtner, U. Keller, J.-P. Meyn, G. Huber, T. H. Chiu, in Digest of Conference on Advanced Solid-State Lasers (Optical Society of America, Washington, D.C., 1995), paper ThB1.

Dill, C.

Ferguson, J. F.

Fiedler, K.

Haus, H. A.

H. A. Haus, IEEE J. Quantum Electron. QE-12, 169 (1976).
[CrossRef]

Huber, G.

B. Braun, F. X. Kärtner, U. Keller, J.-P. Meyn, G. Huber, T. H. Chiu, in Digest of Conference on Advanced Solid-State Lasers (Optical Society of America, Washington, D.C., 1995), paper ThB1.

Kamp, M.

F. X. Kärtner, L. R. Brovelli, D. Kopf, M. Kamp, I. Calasso, U. Keller, “Control of solid-state laser dynamics by semiconductor devices,” Opt. Eng. (to be published), Eq. II.6.

Kane, T. J.

Kärtner, F. X.

B. Braun, F. X. Kärtner, U. Keller, J.-P. Meyn, G. Huber, T. H. Chiu, in Digest of Conference on Advanced Solid-State Lasers (Optical Society of America, Washington, D.C., 1995), paper ThB1.

F. X. Kärtner, L. R. Brovelli, D. Kopf, M. Kamp, I. Calasso, U. Keller, “Control of solid-state laser dynamics by semiconductor devices,” Opt. Eng. (to be published), Eq. II.6.

Keller, U.

L. R. Brovelli, U. Keller, T. H. Chiu, J. Opt. Soc. Am. B 12, 311 (1995).
[CrossRef]

U. Keller, Appl. Phys. B 58, 347 (1994).
[CrossRef]

K. J. Weingarten, B. Braun, U. Keller, Opt. Lett. 19, 1140 (1994).
[PubMed]

U. Keller, D. A. B. Miller, G. D. Boyd, T. H. Chiu, J. F. Ferguson, M. T. Asom, Opt. Lett. 17, 505 (1992).
[CrossRef] [PubMed]

B. Braun, F. X. Kärtner, U. Keller, J.-P. Meyn, G. Huber, T. H. Chiu, in Digest of Conference on Advanced Solid-State Lasers (Optical Society of America, Washington, D.C., 1995), paper ThB1.

B. Braun, U. Keller, in Conference on Lasers and Electro-Optics, Vol. 8 of 1994 OSA Technical Digest Series (Optical Society of America, Washington, D.C., 1994), paper CPD20.

F. X. Kärtner, L. R. Brovelli, D. Kopf, M. Kamp, I. Calasso, U. Keller, “Control of solid-state laser dynamics by semiconductor devices,” Opt. Eng. (to be published), Eq. II.6.

Kopf, D.

F. X. Kärtner, L. R. Brovelli, D. Kopf, M. Kamp, I. Calasso, U. Keller, “Control of solid-state laser dynamics by semiconductor devices,” Opt. Eng. (to be published), Eq. II.6.

Kürz, P.

Lee, K. K.

Li, S.

Meyn, J.-P.

B. Braun, F. X. Kärtner, U. Keller, J.-P. Meyn, G. Huber, T. H. Chiu, in Digest of Conference on Advanced Solid-State Lasers (Optical Society of America, Washington, D.C., 1995), paper ThB1.

Miller, D. A. B.

Mlynek, J.

Paschotta, R.

Schiller, S.

Weingarten, K. J.

Zayhowski, J. J.

Zhou, S.

Appl. Phys. B

U. Keller, Appl. Phys. B 58, 347 (1994).
[CrossRef]

IEEE J. Quantum Electron.

H. A. Haus, IEEE J. Quantum Electron. QE-12, 169 (1976).
[CrossRef]

J. Opt. Soc. Am. B

Opt. Lett.

Other

F. X. Kärtner, L. R. Brovelli, D. Kopf, M. Kamp, I. Calasso, U. Keller, “Control of solid-state laser dynamics by semiconductor devices,” Opt. Eng. (to be published), Eq. II.6.

B. Braun, U. Keller, in Conference on Lasers and Electro-Optics, Vol. 8 of 1994 OSA Technical Digest Series (Optical Society of America, Washington, D.C., 1994), paper CPD20.

B. Braun, F. X. Kärtner, U. Keller, J.-P. Meyn, G. Huber, T. H. Chiu, in Digest of Conference on Advanced Solid-State Lasers (Optical Society of America, Washington, D.C., 1995), paper ThB1.

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Figures (4)

Fig. 1
Fig. 1

Layout of the MISER with an A-FPSA coupled to a total-internal-reflection point and (at the right) a schematic of the interface between the MISER and the A-FPSA.

Fig. 2
Fig. 2

Calculated reflectivity RB and the ξ factor as functions of the spacing z between the crystal and the absorber. The thickness of the absorber is set to antiresonance, and the effective saturation intensity is given by I sat eff = I sat 0 / ξ, where I sat 0 is the saturation intensity of the antireflection-coated saturable absorber.

Fig. 3
Fig. 3

(a) Single Q-switched pulse with a FWHM pulse width of 95 ns, a pulse energy of 0.73 μJ, and a pulse repetition rate of 750 kHz. (b) Q-switched pulse train.

Fig. 4
Fig. 4

Pulse width and repetition rate as functions of the spacing between the crystal and the semiconductor device (Ppump = 2 W).

Equations (2)

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- T L P d q d P | cw = T L q 0 χ r - 1 ( 1 + r - 1 χ ) 2 .
T L q 0 χ ( r - 1 ) r > 1 ,

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