Abstract

We investigate the recombination time of nonequilibrium carriers in a highly excited In0.85 Ga0.15As/GaAs relaxed superlattice structure by studying the time-resolved infrared reflectivity at 10.6 μm. Using a cross-correlation infrared reflectivity technique, we have measured a carrier lifetime of 2.6 ± 0.3 ps. Lattice mismatch between In0.85 Ga0.15As and GaAs layers gives rise to misfit dislocations, which act as ultrafast recombination centers and result in a dramatic decrease of the carrier lifetime.

© 1995 Optical Society of America

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