Abstract

We report a simple way of determining the spontaneous-emission spectrum from the output spectrum directly detected at the end facet of a semiconductor laser and measuring the wavelength difference between the peaks of the gain and the spontaneous emission. This difference can be used to explain the blue shift of the peak wavelength of the output spectrum after the facets of the diode have been antireflection coated during the process of making a traveling-wave semiconductor amplifier.

© 1995 Optical Society of America

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