Abstract

We have developed and demonstrated a simple, single-shot method to measure the duration of a weak ultrafast pulse. The density of free electrons in a semiconductor is changed by a pump beam, causing a time-dependent variation of the refractive index, which in turn determines the spatial distribution of the reflected probe-beam intensity. The derivative of the spatial distribution in the transition region is a cross correlation of the pump and probe pulses. This technique is suitable for measuring weak pulses such as low-level synchrotron light in the mid-infrared-to-far-infrared range.

© 1995 Optical Society of America

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References

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  6. P. M. Fauchet, W. L. Nighan, Appl. Phys. Lett. 48, 721 (1986).
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    [CrossRef]
  8. G. Mourou, C. V. Stancampiano, D. Blumenthal, Appl. Phys. Lett. 38, 470 (1981).
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  9. D. You, R. R. Jones, P. H. Bucksbaum, D. R. Dykaar, Opt. Lett. 18, 290 (1993).
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1993 (1)

1991 (1)

1988 (1)

N. K. Bambha, E. L. Nighan, I. H. Campbell, P. M. Fauchet, N. M. Johnson, J. Appl. Phys. 63, 2316 (1988).
[CrossRef]

1987 (1)

1986 (2)

P. Sperber, A. Penzkofer, Opt. Quantum Electron. 18, 145 (1986).
[CrossRef]

P. M. Fauchet, W. L. Nighan, Appl. Phys. Lett. 48, 721 (1986).
[CrossRef]

1985 (1)

P. B. Corkum, IEEE J. Quantum Electron. QE-21, 216 (1985).
[CrossRef]

1983 (1)

1981 (1)

G. Mourou, C. V. Stancampiano, D. Blumenthal, Appl. Phys. Lett. 38, 470 (1981).
[CrossRef]

1977 (1)

J. Janszky, G. Corradi, R. N. Gyuzalian, Opt. Commun. 23, 293 (1977).
[CrossRef]

1973 (1)

Augst, S.

Bambha, N. K.

N. K. Bambha, E. L. Nighan, I. H. Campbell, P. M. Fauchet, N. M. Johnson, J. Appl. Phys. 63, 2316 (1988).
[CrossRef]

Bartlett, R.

Blumenthal, D.

G. Mourou, C. V. Stancampiano, D. Blumenthal, Appl. Phys. Lett. 38, 470 (1981).
[CrossRef]

Brun, A.

Bucksbaum, P. H.

Campbell, I. H.

N. K. Bambha, E. L. Nighan, I. H. Campbell, P. M. Fauchet, N. M. Johnson, J. Appl. Phys. 63, 2316 (1988).
[CrossRef]

Chen, H.

Chuang, Y.-H.

Corkum, P. B.

P. B. Corkum, IEEE J. Quantum Electron. QE-21, 216 (1985).
[CrossRef]

Corradi, G.

J. Janszky, G. Corradi, R. N. Gyuzalian, Opt. Commun. 23, 293 (1977).
[CrossRef]

Dykaar, D. R.

Ellis, H.

Fauchet, P. M.

N. K. Bambha, E. L. Nighan, I. H. Campbell, P. M. Fauchet, N. M. Johnson, J. Appl. Phys. 63, 2316 (1988).
[CrossRef]

P. M. Fauchet, W. L. Nighan, Appl. Phys. Lett. 48, 721 (1986).
[CrossRef]

Georges, P.

Gyuzalian, R. N.

J. Janszky, G. Corradi, R. N. Gyuzalian, Opt. Commun. 23, 293 (1977).
[CrossRef]

Hecht, E.

E. Hecht, Optics, 2nd ed. (Addison-Wesley, Reading, Mass., 1987).

Ironside, C. N.

R. W. Munn, C. N. Ironside, Principles and Applications of Nonlinear Optical Materials (Blackie, New York, 1993), p. 43.

Janszky, J.

J. Janszky, G. Corradi, R. N. Gyuzalian, Opt. Commun. 23, 293 (1977).
[CrossRef]

Johnson, N. M.

N. K. Bambha, E. L. Nighan, I. H. Campbell, P. M. Fauchet, N. M. Johnson, J. Appl. Phys. 63, 2316 (1988).
[CrossRef]

Jones, R. R.

Meyerhofer, D. D.

Milnes, A. G.

A. G. Milnes, Semiconductor Devices and Integrated Electronics (Van Nostrand Reinhold, New York, 1980), p. 33.

Mourou, G.

G. Mourou, C. V. Stancampiano, D. Blumenthal, Appl. Phys. Lett. 38, 470 (1981).
[CrossRef]

Munn, R. W.

R. W. Munn, C. N. Ironside, Principles and Applications of Nonlinear Optical Materials (Blackie, New York, 1993), p. 43.

Nighan, E. L.

N. K. Bambha, E. L. Nighan, I. H. Campbell, P. M. Fauchet, N. M. Johnson, J. Appl. Phys. 63, 2316 (1988).
[CrossRef]

Nighan, W. L.

P. M. Fauchet, W. L. Nighan, Appl. Phys. Lett. 48, 721 (1986).
[CrossRef]

Peatross, J.

Penzkofer, A.

P. Sperber, A. Penzkofer, Opt. Quantum Electron. 18, 145 (1986).
[CrossRef]

Roger, G.

Salin, F.

Sperber, P.

P. Sperber, A. Penzkofer, Opt. Quantum Electron. 18, 145 (1986).
[CrossRef]

Stancampiano, C. V.

G. Mourou, C. V. Stancampiano, D. Blumenthal, Appl. Phys. Lett. 38, 470 (1981).
[CrossRef]

Stevenson, J. R.

Uchida, S.

Yeh, P.

You, D.

Appl. Opt. (2)

Appl. Phys. Lett. (2)

P. M. Fauchet, W. L. Nighan, Appl. Phys. Lett. 48, 721 (1986).
[CrossRef]

G. Mourou, C. V. Stancampiano, D. Blumenthal, Appl. Phys. Lett. 38, 470 (1981).
[CrossRef]

IEEE J. Quantum Electron. (1)

P. B. Corkum, IEEE J. Quantum Electron. QE-21, 216 (1985).
[CrossRef]

J. Appl. Phys. (1)

N. K. Bambha, E. L. Nighan, I. H. Campbell, P. M. Fauchet, N. M. Johnson, J. Appl. Phys. 63, 2316 (1988).
[CrossRef]

J. Opt. Soc. Am. B (1)

Opt. Commun. (1)

J. Janszky, G. Corradi, R. N. Gyuzalian, Opt. Commun. 23, 293 (1977).
[CrossRef]

Opt. Lett. (2)

Opt. Quantum Electron. (1)

P. Sperber, A. Penzkofer, Opt. Quantum Electron. 18, 145 (1986).
[CrossRef]

Other (3)

E. Hecht, Optics, 2nd ed. (Addison-Wesley, Reading, Mass., 1987).

A. G. Milnes, Semiconductor Devices and Integrated Electronics (Van Nostrand Reinhold, New York, 1980), p. 33.

R. W. Munn, C. N. Ironside, Principles and Applications of Nonlinear Optical Materials (Blackie, New York, 1993), p. 43.

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Figures (2)

Fig. 1
Fig. 1

Schematic of the experimental setup.

Fig. 2
Fig. 2

a, Intensity profile of the reflected probe beam and b, the least-squares fit, giving a measured probe-pulse width of 1.9 ± 0.3 ps.

Equations (4)

Equations on this page are rendered with MathJax. Learn more.

d N d t = ( 1 - R p ) α I ω p - γ N 3 - N τ ,
n = [ ( n 0 + β T ) 2 - N e 2 m * 0 ω 2 ] 1 / 2 ,
E R ( x ) = - d t R ( t ) I sy ( t - x c tan θ ) ,
E R ( x ) x = R 0 I sy ( x c tan θ ) ,

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