Abstract

Two high-speed liquid-crystal-on-silicon spatial light modulators that use high-voltage circuitry are described. The high-voltage circuits used can provide 30 and 15 V for switching chiral smectic liquid-crystal spatial light modulators with 10–90% switching times of 30 and 50 μs, respectively. The ON/OFF contrast ratios are 13:1 and 15:1.

© 1995 Optical Society of America

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References

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  1. W. A. Crossland, P. J. Ayliffe, Proc. Soc. Inf. Displ. Int. Symp. Digest 22, 112 (1981).
  2. D. Vass, UK DTI patent8910168.7.
  3. T. M. Slagle, K. Wagner, Opt. Lett. 17,1164 (1992).
    [CrossRef] [PubMed]
  4. C. C. Mao, K. M. Johnson, Appl. Opt. 32, 1290 (1993).
    [CrossRef] [PubMed]
  5. N. A. Clark, S. T. Lagerwall, Appl. Phys. Lett. 36, 899 (1980).
    [CrossRef]
  6. G. Andersson, I. Dahl, W. Kuczynski, S. T. Lagerwall, K. Sharp, B. Stebler, Ferroelectrics 84, 285 (1988).
    [CrossRef]
  7. J. Funfschilling, M. Schadt, J. Appl. Phys. 66, 3877 (1989).
    [CrossRef]
  8. N. Collings, W. A. Crossland, P. J. Ayliffe, D. J. Vass, I. Underwood, Appl. Opt. 28, 4740 (1989).
    [CrossRef] [PubMed]
  9. L. K. Cotter, T. J. Dillon, M. A. Handschy, Opt. Lett. 15, 291 (1990).
    [CrossRef] [PubMed]
  10. K. M. Johnson, D. M. McKnight, I. Underwood, IEEE J. Quantum Electron. 29, 699 (1993).
    [CrossRef]
  11. D. McKnight, K. M. Johnson, R. A. Serati, Appl. Opt. 33, 2775 (1994).
    [CrossRef] [PubMed]
  12. J. R. Mann, Floating gate circuits in MOSIS, MIT Lincoln Lab. Tech. Rep. No. 824 (Lincoln Laboratory, Lexington, Mass., November1, 1990), p. 31.
  13. British Drug House, Broom Road, Poole BH12 4NN, England.

1994 (1)

1993 (2)

C. C. Mao, K. M. Johnson, Appl. Opt. 32, 1290 (1993).
[CrossRef] [PubMed]

K. M. Johnson, D. M. McKnight, I. Underwood, IEEE J. Quantum Electron. 29, 699 (1993).
[CrossRef]

1992 (1)

1990 (1)

1989 (2)

1988 (1)

G. Andersson, I. Dahl, W. Kuczynski, S. T. Lagerwall, K. Sharp, B. Stebler, Ferroelectrics 84, 285 (1988).
[CrossRef]

1981 (1)

W. A. Crossland, P. J. Ayliffe, Proc. Soc. Inf. Displ. Int. Symp. Digest 22, 112 (1981).

1980 (1)

N. A. Clark, S. T. Lagerwall, Appl. Phys. Lett. 36, 899 (1980).
[CrossRef]

Andersson, G.

G. Andersson, I. Dahl, W. Kuczynski, S. T. Lagerwall, K. Sharp, B. Stebler, Ferroelectrics 84, 285 (1988).
[CrossRef]

Ayliffe, P. J.

N. Collings, W. A. Crossland, P. J. Ayliffe, D. J. Vass, I. Underwood, Appl. Opt. 28, 4740 (1989).
[CrossRef] [PubMed]

W. A. Crossland, P. J. Ayliffe, Proc. Soc. Inf. Displ. Int. Symp. Digest 22, 112 (1981).

Clark, N. A.

N. A. Clark, S. T. Lagerwall, Appl. Phys. Lett. 36, 899 (1980).
[CrossRef]

Collings, N.

Cotter, L. K.

Crossland, W. A.

N. Collings, W. A. Crossland, P. J. Ayliffe, D. J. Vass, I. Underwood, Appl. Opt. 28, 4740 (1989).
[CrossRef] [PubMed]

W. A. Crossland, P. J. Ayliffe, Proc. Soc. Inf. Displ. Int. Symp. Digest 22, 112 (1981).

Dahl, I.

G. Andersson, I. Dahl, W. Kuczynski, S. T. Lagerwall, K. Sharp, B. Stebler, Ferroelectrics 84, 285 (1988).
[CrossRef]

Dillon, T. J.

Funfschilling, J.

J. Funfschilling, M. Schadt, J. Appl. Phys. 66, 3877 (1989).
[CrossRef]

Handschy, M. A.

Johnson, K. M.

Kuczynski, W.

G. Andersson, I. Dahl, W. Kuczynski, S. T. Lagerwall, K. Sharp, B. Stebler, Ferroelectrics 84, 285 (1988).
[CrossRef]

Lagerwall, S. T.

G. Andersson, I. Dahl, W. Kuczynski, S. T. Lagerwall, K. Sharp, B. Stebler, Ferroelectrics 84, 285 (1988).
[CrossRef]

N. A. Clark, S. T. Lagerwall, Appl. Phys. Lett. 36, 899 (1980).
[CrossRef]

Mann, J. R.

J. R. Mann, Floating gate circuits in MOSIS, MIT Lincoln Lab. Tech. Rep. No. 824 (Lincoln Laboratory, Lexington, Mass., November1, 1990), p. 31.

Mao, C. C.

McKnight, D.

McKnight, D. M.

K. M. Johnson, D. M. McKnight, I. Underwood, IEEE J. Quantum Electron. 29, 699 (1993).
[CrossRef]

Schadt, M.

J. Funfschilling, M. Schadt, J. Appl. Phys. 66, 3877 (1989).
[CrossRef]

Serati, R. A.

Sharp, K.

G. Andersson, I. Dahl, W. Kuczynski, S. T. Lagerwall, K. Sharp, B. Stebler, Ferroelectrics 84, 285 (1988).
[CrossRef]

Slagle, T. M.

Stebler, B.

G. Andersson, I. Dahl, W. Kuczynski, S. T. Lagerwall, K. Sharp, B. Stebler, Ferroelectrics 84, 285 (1988).
[CrossRef]

Underwood, I.

K. M. Johnson, D. M. McKnight, I. Underwood, IEEE J. Quantum Electron. 29, 699 (1993).
[CrossRef]

N. Collings, W. A. Crossland, P. J. Ayliffe, D. J. Vass, I. Underwood, Appl. Opt. 28, 4740 (1989).
[CrossRef] [PubMed]

Vass, D.

D. Vass, UK DTI patent8910168.7.

Vass, D. J.

Wagner, K.

Appl. Opt. (3)

Appl. Phys. Lett. (1)

N. A. Clark, S. T. Lagerwall, Appl. Phys. Lett. 36, 899 (1980).
[CrossRef]

Ferroelectrics (1)

G. Andersson, I. Dahl, W. Kuczynski, S. T. Lagerwall, K. Sharp, B. Stebler, Ferroelectrics 84, 285 (1988).
[CrossRef]

IEEE J. Quantum Electron. (1)

K. M. Johnson, D. M. McKnight, I. Underwood, IEEE J. Quantum Electron. 29, 699 (1993).
[CrossRef]

J. Appl. Phys. (1)

J. Funfschilling, M. Schadt, J. Appl. Phys. 66, 3877 (1989).
[CrossRef]

Opt. Lett. (2)

Proc. Soc. Inf. Displ. Int. Symp. Digest (1)

W. A. Crossland, P. J. Ayliffe, Proc. Soc. Inf. Displ. Int. Symp. Digest 22, 112 (1981).

Other (3)

D. Vass, UK DTI patent8910168.7.

J. R. Mann, Floating gate circuits in MOSIS, MIT Lincoln Lab. Tech. Rep. No. 824 (Lincoln Laboratory, Lexington, Mass., November1, 1990), p. 31.

British Drug House, Broom Road, Poole BH12 4NN, England.

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Figures (5)

Fig. 1
Fig. 1

Structures of HV transistors used in the high-speed LCOS SLM’s: (a) n-FET, (b) p-FET.

Fig. 2
Fig. 2

HV addressing circuit. Vhi, applied high voltage; Vb bias voltage; Vout, output voltage; V1 and V2, TTL-level voltages.

Fig. 3
Fig. 3

HV inverters. Vin, TTL-level input signal; Vhi, applied high voltage; Vout, output voltage.

Fig. 4
Fig. 4

Photograph showing the output optical pattern CU obtained from the LCOS SLM.

Fig. 5
Fig. 5

Oscilloscope trace showing a switching time of 30 μs for the LCOS SLM.

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