Abstract

The gain compression that is due to carrier heating and spectral hole burning is concentrated in semiconductor lasers at the antinodes of the cavity standing wave. To first order, this enhances in lasers the material gain compression coefficient compared to nonresonant amplifiers by the factor 3/2.

© 1994 Optical Society of America

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References

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  1. C. H. Henry, J. Lightwave Technol. 4, 228 (1986).
    [CrossRef]
  2. B. Tromborg, H. Olesen, X. Pan, IEEE J. Quantum Electron. 27, 178 (1991).
    [CrossRef]
  3. G. H. Duan, P. Gallion, G. Debarge, IEEE J. Quantum Electron. 26, 32 (1990).
    [CrossRef]
  4. G. H. Duan, P. Gallion, G. Agrawal, IEEE J. Quantum Electron. 29, 844 (1993).
    [CrossRef]
  5. M. P. Kesler, E. P. Ippen, Appl. Phys. Lett. 51, 1765 (1987).
    [CrossRef]
  6. C. B. Su, V. A. Lanzisera, IEEE J. Quantum Electron. QE-22, 1568 (1986).
    [CrossRef]
  7. G. P. Agrawal, IEEE J. Quantum Electron. QE-23, 860 (1987).
    [CrossRef]
  8. C. B. Su, Appl. Phys. Lett. 53, 950 (1988).
    [CrossRef]
  9. H. E. Lassen, H. Olesen, B. Tromborg, IEEE Photon. Technol. Lett. 1, 261 (1989).
    [CrossRef]
  10. X. Pan, H. Olesen, B. Tromborg, H. E. Lassen, Proc. Inst. Electr. Eng. Part J 139, 289 (1992).
  11. A. Mecozzi, A. D’Ottavi, R. Hui, IEEE J. Quantum- Electron. 29, 1477 (1993).
    [CrossRef]
  12. H. A. Haus, Waves and Fields in Optoelectronics, 1st ed. (Prentice-Hall, Englewood Cliffs, N. J., 1984), Chap. 8, p. 235.

1993 (2)

G. H. Duan, P. Gallion, G. Agrawal, IEEE J. Quantum Electron. 29, 844 (1993).
[CrossRef]

A. Mecozzi, A. D’Ottavi, R. Hui, IEEE J. Quantum- Electron. 29, 1477 (1993).
[CrossRef]

1992 (1)

X. Pan, H. Olesen, B. Tromborg, H. E. Lassen, Proc. Inst. Electr. Eng. Part J 139, 289 (1992).

1991 (1)

B. Tromborg, H. Olesen, X. Pan, IEEE J. Quantum Electron. 27, 178 (1991).
[CrossRef]

1990 (1)

G. H. Duan, P. Gallion, G. Debarge, IEEE J. Quantum Electron. 26, 32 (1990).
[CrossRef]

1989 (1)

H. E. Lassen, H. Olesen, B. Tromborg, IEEE Photon. Technol. Lett. 1, 261 (1989).
[CrossRef]

1988 (1)

C. B. Su, Appl. Phys. Lett. 53, 950 (1988).
[CrossRef]

1987 (2)

G. P. Agrawal, IEEE J. Quantum Electron. QE-23, 860 (1987).
[CrossRef]

M. P. Kesler, E. P. Ippen, Appl. Phys. Lett. 51, 1765 (1987).
[CrossRef]

1986 (2)

C. B. Su, V. A. Lanzisera, IEEE J. Quantum Electron. QE-22, 1568 (1986).
[CrossRef]

C. H. Henry, J. Lightwave Technol. 4, 228 (1986).
[CrossRef]

Agrawal, G.

G. H. Duan, P. Gallion, G. Agrawal, IEEE J. Quantum Electron. 29, 844 (1993).
[CrossRef]

Agrawal, G. P.

G. P. Agrawal, IEEE J. Quantum Electron. QE-23, 860 (1987).
[CrossRef]

D’Ottavi, A.

A. Mecozzi, A. D’Ottavi, R. Hui, IEEE J. Quantum- Electron. 29, 1477 (1993).
[CrossRef]

Debarge, G.

G. H. Duan, P. Gallion, G. Debarge, IEEE J. Quantum Electron. 26, 32 (1990).
[CrossRef]

Duan, G. H.

G. H. Duan, P. Gallion, G. Agrawal, IEEE J. Quantum Electron. 29, 844 (1993).
[CrossRef]

G. H. Duan, P. Gallion, G. Debarge, IEEE J. Quantum Electron. 26, 32 (1990).
[CrossRef]

Gallion, P.

G. H. Duan, P. Gallion, G. Agrawal, IEEE J. Quantum Electron. 29, 844 (1993).
[CrossRef]

G. H. Duan, P. Gallion, G. Debarge, IEEE J. Quantum Electron. 26, 32 (1990).
[CrossRef]

Haus, H. A.

H. A. Haus, Waves and Fields in Optoelectronics, 1st ed. (Prentice-Hall, Englewood Cliffs, N. J., 1984), Chap. 8, p. 235.

Henry, C. H.

C. H. Henry, J. Lightwave Technol. 4, 228 (1986).
[CrossRef]

Hui, R.

A. Mecozzi, A. D’Ottavi, R. Hui, IEEE J. Quantum- Electron. 29, 1477 (1993).
[CrossRef]

Ippen, E. P.

M. P. Kesler, E. P. Ippen, Appl. Phys. Lett. 51, 1765 (1987).
[CrossRef]

Kesler, M. P.

M. P. Kesler, E. P. Ippen, Appl. Phys. Lett. 51, 1765 (1987).
[CrossRef]

Lanzisera, V. A.

C. B. Su, V. A. Lanzisera, IEEE J. Quantum Electron. QE-22, 1568 (1986).
[CrossRef]

Lassen, H. E.

X. Pan, H. Olesen, B. Tromborg, H. E. Lassen, Proc. Inst. Electr. Eng. Part J 139, 289 (1992).

H. E. Lassen, H. Olesen, B. Tromborg, IEEE Photon. Technol. Lett. 1, 261 (1989).
[CrossRef]

Mecozzi, A.

A. Mecozzi, A. D’Ottavi, R. Hui, IEEE J. Quantum- Electron. 29, 1477 (1993).
[CrossRef]

Olesen, H.

X. Pan, H. Olesen, B. Tromborg, H. E. Lassen, Proc. Inst. Electr. Eng. Part J 139, 289 (1992).

B. Tromborg, H. Olesen, X. Pan, IEEE J. Quantum Electron. 27, 178 (1991).
[CrossRef]

H. E. Lassen, H. Olesen, B. Tromborg, IEEE Photon. Technol. Lett. 1, 261 (1989).
[CrossRef]

Pan, X.

X. Pan, H. Olesen, B. Tromborg, H. E. Lassen, Proc. Inst. Electr. Eng. Part J 139, 289 (1992).

B. Tromborg, H. Olesen, X. Pan, IEEE J. Quantum Electron. 27, 178 (1991).
[CrossRef]

Su, C. B.

C. B. Su, Appl. Phys. Lett. 53, 950 (1988).
[CrossRef]

C. B. Su, V. A. Lanzisera, IEEE J. Quantum Electron. QE-22, 1568 (1986).
[CrossRef]

Tromborg, B.

X. Pan, H. Olesen, B. Tromborg, H. E. Lassen, Proc. Inst. Electr. Eng. Part J 139, 289 (1992).

B. Tromborg, H. Olesen, X. Pan, IEEE J. Quantum Electron. 27, 178 (1991).
[CrossRef]

H. E. Lassen, H. Olesen, B. Tromborg, IEEE Photon. Technol. Lett. 1, 261 (1989).
[CrossRef]

Appl. Phys. Lett. (2)

M. P. Kesler, E. P. Ippen, Appl. Phys. Lett. 51, 1765 (1987).
[CrossRef]

C. B. Su, Appl. Phys. Lett. 53, 950 (1988).
[CrossRef]

IEEE J. Quantum Electron. (5)

C. B. Su, V. A. Lanzisera, IEEE J. Quantum Electron. QE-22, 1568 (1986).
[CrossRef]

G. P. Agrawal, IEEE J. Quantum Electron. QE-23, 860 (1987).
[CrossRef]

B. Tromborg, H. Olesen, X. Pan, IEEE J. Quantum Electron. 27, 178 (1991).
[CrossRef]

G. H. Duan, P. Gallion, G. Debarge, IEEE J. Quantum Electron. 26, 32 (1990).
[CrossRef]

G. H. Duan, P. Gallion, G. Agrawal, IEEE J. Quantum Electron. 29, 844 (1993).
[CrossRef]

IEEE J. Quantum- Electron. (1)

A. Mecozzi, A. D’Ottavi, R. Hui, IEEE J. Quantum- Electron. 29, 1477 (1993).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

H. E. Lassen, H. Olesen, B. Tromborg, IEEE Photon. Technol. Lett. 1, 261 (1989).
[CrossRef]

J. Lightwave Technol. (1)

C. H. Henry, J. Lightwave Technol. 4, 228 (1986).
[CrossRef]

Proc. Inst. Electr. Eng. Part J (1)

X. Pan, H. Olesen, B. Tromborg, H. E. Lassen, Proc. Inst. Electr. Eng. Part J 139, 289 (1992).

Other (1)

H. A. Haus, Waves and Fields in Optoelectronics, 1st ed. (Prentice-Hall, Englewood Cliffs, N. J., 1984), Chap. 8, p. 235.

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Figures (2)

Fig. 1
Fig. 1

A/Ao, whose meaning is defined in the text, versus ∊S.

Fig. 2
Fig. 2

Enhancement factor C for quarter-wave-shifted semiconductor lasers versus κL.

Equations (15)

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g [ n ( z ) , E ( z ) 2 ] = 1 2 a [ n ( z ) - n 0 ] [ 1 1 + E ( z ) 2 - i α ] ,
E ( z ) = E f ( z ) exp ( i k z ) + E b ( z ) exp ( - i k z ) ,
I f = k 2 π g [ n ( z ) , E ( z ) 2 ] E ( z ) exp ( - i k z ) d z ,
I f = 1 2 a [ n ( z ) - n 0 ] ( A f - i α ) E f ,
A f = 1 R - 2 E b 2 R ( R + 1 + S ) ,
R = [ ( 1 + S ) 2 - 4 2 E b 2 E f 2 ] 1 / 2
S = E f 2 + E b 2 .
d E f d z = - α sc 2 E f + 1 2 a [ n ( z ) - n 0 ] ( A f - i α ) E f + i κ exp [ - i ( 2 δ z + ϕ g ) ] E b - d E b d z = - α sc 2 E b + 1 2 a [ n ( z ) - n 0 ] ( A f - i α ) E b + exp [ i ( 2 δ z + ϕ g ) ] E f .
A o = 1 1 + S
A f , b = 1 - ( E f , b 2 + 2 E b , f 2 ) .
E f ( L ) = E f ( 0 ) × exp { g - α sc 2 L - g 2 0 L [ E f ( z ) 2 + 2 E b ( z ) 2 ] d z } , E b ( 0 ) = E b ( L ) × exp { g - α sc 2 L - g 2 0 L [ E b ( z ) 2 + 2 E f ( z ) 2 ] d z } .
Δ G rt = - g { 0 L [ E b ( z ) 2 + 2 E f ( z ) 2 ] d z + 0 L [ E f ( z ) 2 + 2 E b ( z ) 2 ] d z } = - 3 g 0 L [ E f ( z ) 2 + E b ( z ) 2 ] d z .
Δ g = 3 2 g 0 L d z L [ E f ( z ) 2 + E b ( z ) 2 ] .
C = 0 L E ( z ) 2 E ( z ) 2 d z 0 L E ( z ) 2 d z 0 L E ( z ) 2 d z / L .
C = 3 2 0 L E f ( z ) E b ( z ) [ E f ( z ) 2 + E b ( z ) 2 ] d z 0 L E f ( z ) E b ( z ) d z 0 L [ E f ( z ) 2 + E b ( z ) 2 ] d z / L ,

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