Abstract

For what is to our knowledge the first time, electric-field-induced optical second-harmonic generation (SHG) is studied at the Si–SiO₂ interface by the use of a metal-oxide-semiconductor (MOS) structure. The crystallographic anisotropy of this phenomenon is studied for MOS structures. Experimental results indicate that the MOS technique of dc electric-field application to the Si–SiO₂ interface can be effectively used for studying electroinduced effects on SHG.

© 1994 Optical Society of America

Femtosecond carrier-induced screening of dc electric-field-induced second-harmonic generation at the Si(001)–SiO₂ interface

J. I. Dadap, P. T. Wilson, M. H. Anderson, M. C. Downer, and M. ter Beek
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Optical second-harmonic generation as a probe of electric-field-induced perturbation of centrosymmetric media

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