Abstract

Photoconductive semiconductors that contain deep-level traps can be used as optical phase detectors because of the photocurrents generated by moving space-charge electric fields formed inside the material by transient optical interference patterns. Two narrow-linewidth Nd:YAG nonplanar ring oscillator lasers were successfully phase locked with InP:Fe, GaAs:Cr, GaAs, and CdTe:V crystals used as optical phase detectors.

© 1994 Optical Society of America

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