Abstract

Static and dynamic properties of dispersive optical bistability (OB) in semiconductor lasers biased from below to above threshold have been investigated theoretically. The OB result is found to be varied continuously from below to above threshold with its maximum value located just above threshold; this result has been verified experimentally. A much faster switch-off of OB can be expected when the laser operates in the injection-locked condition.

© 1993 Optical Society of America

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References

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  1. K. Otsuka, H. Iwamura, IEEE J. Quantum Electron. QE-19, 1184 (1983).
    [CrossRef]
  2. K. Otsuka, S. Kobayashi, Electron. Lett. 19, 262 (1983).
    [CrossRef]
  3. A. J. Adams, H. J. Westlake, M. J. Mahony, I. D. Henning, IEEE J. Quantum Electron. QE-21, 1498 (1985).
    [CrossRef]
  4. M. J. Adams, IEE Proc. Pt. J 132, 343 (1985).
  5. H. Kawaguchi, K. Inoue, T. Matsuoka, K. Otsuka, IEEE J. Quantum Electron. QE-21, 1314 (1985).
    [CrossRef]
  6. R. Hui, A. D’Ottavi, A. Mecozzi, P. Spano, IEEE J. Quantum Electron. 27, 1688 (1991).
    [CrossRef]
  7. R. Lang, IEEE J. Quantum Electron. QE-18, 976 (1982).
    [CrossRef]
  8. R. Hui, A. Mecozzi, A. D’Ottavi, P. Spano, Electron. Lett. 26, 997 (1990).
    [CrossRef]
  9. I. Petitbon, P. Gallion, G. Debarge, C. Chabran, IEEE J. Quantum Electron. 24, 148 (1988).
    [CrossRef]
  10. W. F. Sharfin, M. Dagenais, IEEE J. Quantum Electron. QE-23, 303 (1987).
    [CrossRef]
  11. M. Schell, E. Scholl, IEEE J. Quantum Electron. 26, 1095 (1990).
    [CrossRef]

1991

R. Hui, A. D’Ottavi, A. Mecozzi, P. Spano, IEEE J. Quantum Electron. 27, 1688 (1991).
[CrossRef]

1990

R. Hui, A. Mecozzi, A. D’Ottavi, P. Spano, Electron. Lett. 26, 997 (1990).
[CrossRef]

M. Schell, E. Scholl, IEEE J. Quantum Electron. 26, 1095 (1990).
[CrossRef]

1988

I. Petitbon, P. Gallion, G. Debarge, C. Chabran, IEEE J. Quantum Electron. 24, 148 (1988).
[CrossRef]

1987

W. F. Sharfin, M. Dagenais, IEEE J. Quantum Electron. QE-23, 303 (1987).
[CrossRef]

1985

A. J. Adams, H. J. Westlake, M. J. Mahony, I. D. Henning, IEEE J. Quantum Electron. QE-21, 1498 (1985).
[CrossRef]

M. J. Adams, IEE Proc. Pt. J 132, 343 (1985).

H. Kawaguchi, K. Inoue, T. Matsuoka, K. Otsuka, IEEE J. Quantum Electron. QE-21, 1314 (1985).
[CrossRef]

1983

K. Otsuka, H. Iwamura, IEEE J. Quantum Electron. QE-19, 1184 (1983).
[CrossRef]

K. Otsuka, S. Kobayashi, Electron. Lett. 19, 262 (1983).
[CrossRef]

1982

R. Lang, IEEE J. Quantum Electron. QE-18, 976 (1982).
[CrossRef]

Adams, A. J.

A. J. Adams, H. J. Westlake, M. J. Mahony, I. D. Henning, IEEE J. Quantum Electron. QE-21, 1498 (1985).
[CrossRef]

Adams, M. J.

M. J. Adams, IEE Proc. Pt. J 132, 343 (1985).

Chabran, C.

I. Petitbon, P. Gallion, G. Debarge, C. Chabran, IEEE J. Quantum Electron. 24, 148 (1988).
[CrossRef]

D’Ottavi, A.

R. Hui, A. D’Ottavi, A. Mecozzi, P. Spano, IEEE J. Quantum Electron. 27, 1688 (1991).
[CrossRef]

R. Hui, A. Mecozzi, A. D’Ottavi, P. Spano, Electron. Lett. 26, 997 (1990).
[CrossRef]

Dagenais, M.

W. F. Sharfin, M. Dagenais, IEEE J. Quantum Electron. QE-23, 303 (1987).
[CrossRef]

Debarge, G.

I. Petitbon, P. Gallion, G. Debarge, C. Chabran, IEEE J. Quantum Electron. 24, 148 (1988).
[CrossRef]

Gallion, P.

I. Petitbon, P. Gallion, G. Debarge, C. Chabran, IEEE J. Quantum Electron. 24, 148 (1988).
[CrossRef]

Henning, I. D.

A. J. Adams, H. J. Westlake, M. J. Mahony, I. D. Henning, IEEE J. Quantum Electron. QE-21, 1498 (1985).
[CrossRef]

Hui, R.

R. Hui, A. D’Ottavi, A. Mecozzi, P. Spano, IEEE J. Quantum Electron. 27, 1688 (1991).
[CrossRef]

R. Hui, A. Mecozzi, A. D’Ottavi, P. Spano, Electron. Lett. 26, 997 (1990).
[CrossRef]

Inoue, K.

H. Kawaguchi, K. Inoue, T. Matsuoka, K. Otsuka, IEEE J. Quantum Electron. QE-21, 1314 (1985).
[CrossRef]

Iwamura, H.

K. Otsuka, H. Iwamura, IEEE J. Quantum Electron. QE-19, 1184 (1983).
[CrossRef]

Kawaguchi, H.

H. Kawaguchi, K. Inoue, T. Matsuoka, K. Otsuka, IEEE J. Quantum Electron. QE-21, 1314 (1985).
[CrossRef]

Kobayashi, S.

K. Otsuka, S. Kobayashi, Electron. Lett. 19, 262 (1983).
[CrossRef]

Lang, R.

R. Lang, IEEE J. Quantum Electron. QE-18, 976 (1982).
[CrossRef]

Mahony, M. J.

A. J. Adams, H. J. Westlake, M. J. Mahony, I. D. Henning, IEEE J. Quantum Electron. QE-21, 1498 (1985).
[CrossRef]

Matsuoka, T.

H. Kawaguchi, K. Inoue, T. Matsuoka, K. Otsuka, IEEE J. Quantum Electron. QE-21, 1314 (1985).
[CrossRef]

Mecozzi, A.

R. Hui, A. D’Ottavi, A. Mecozzi, P. Spano, IEEE J. Quantum Electron. 27, 1688 (1991).
[CrossRef]

R. Hui, A. Mecozzi, A. D’Ottavi, P. Spano, Electron. Lett. 26, 997 (1990).
[CrossRef]

Otsuka, K.

H. Kawaguchi, K. Inoue, T. Matsuoka, K. Otsuka, IEEE J. Quantum Electron. QE-21, 1314 (1985).
[CrossRef]

K. Otsuka, H. Iwamura, IEEE J. Quantum Electron. QE-19, 1184 (1983).
[CrossRef]

K. Otsuka, S. Kobayashi, Electron. Lett. 19, 262 (1983).
[CrossRef]

Petitbon, I.

I. Petitbon, P. Gallion, G. Debarge, C. Chabran, IEEE J. Quantum Electron. 24, 148 (1988).
[CrossRef]

Schell, M.

M. Schell, E. Scholl, IEEE J. Quantum Electron. 26, 1095 (1990).
[CrossRef]

Scholl, E.

M. Schell, E. Scholl, IEEE J. Quantum Electron. 26, 1095 (1990).
[CrossRef]

Sharfin, W. F.

W. F. Sharfin, M. Dagenais, IEEE J. Quantum Electron. QE-23, 303 (1987).
[CrossRef]

Spano, P.

R. Hui, A. D’Ottavi, A. Mecozzi, P. Spano, IEEE J. Quantum Electron. 27, 1688 (1991).
[CrossRef]

R. Hui, A. Mecozzi, A. D’Ottavi, P. Spano, Electron. Lett. 26, 997 (1990).
[CrossRef]

Westlake, H. J.

A. J. Adams, H. J. Westlake, M. J. Mahony, I. D. Henning, IEEE J. Quantum Electron. QE-21, 1498 (1985).
[CrossRef]

Electron. Lett.

R. Hui, A. Mecozzi, A. D’Ottavi, P. Spano, Electron. Lett. 26, 997 (1990).
[CrossRef]

K. Otsuka, S. Kobayashi, Electron. Lett. 19, 262 (1983).
[CrossRef]

IEE Proc. Pt. J

M. J. Adams, IEE Proc. Pt. J 132, 343 (1985).

IEEE J. Quantum Electron.

H. Kawaguchi, K. Inoue, T. Matsuoka, K. Otsuka, IEEE J. Quantum Electron. QE-21, 1314 (1985).
[CrossRef]

R. Hui, A. D’Ottavi, A. Mecozzi, P. Spano, IEEE J. Quantum Electron. 27, 1688 (1991).
[CrossRef]

R. Lang, IEEE J. Quantum Electron. QE-18, 976 (1982).
[CrossRef]

I. Petitbon, P. Gallion, G. Debarge, C. Chabran, IEEE J. Quantum Electron. 24, 148 (1988).
[CrossRef]

W. F. Sharfin, M. Dagenais, IEEE J. Quantum Electron. QE-23, 303 (1987).
[CrossRef]

M. Schell, E. Scholl, IEEE J. Quantum Electron. 26, 1095 (1990).
[CrossRef]

A. J. Adams, H. J. Westlake, M. J. Mahony, I. D. Henning, IEEE J. Quantum Electron. QE-21, 1498 (1985).
[CrossRef]

K. Otsuka, H. Iwamura, IEEE J. Quantum Electron. QE-19, 1184 (1983).
[CrossRef]

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Figures (3)

Fig. 1
Fig. 1

Measured bistable loop width versus the normalized injection current with the optical injection level at approximately −23 dBm (squares) together with the calculated results with an injected optical power Pin of −25 dBm (short-dashed curve), −23 dBm (solid curve), and −21 dBm (long-dashed curve). Ith is the free-runing laser threshold.

Fig. 2
Fig. 2

Calculated bistable loop width versus the normalized injection current with the slave laser’s spontaneous emission coefficient βsp as the parameter: βsp = 3.5 × 10−5 (open diamonds), βsp = 1.75 × 10−4 (filled diamonds), βsp = 3.5 × 10−4 (filled circles), βsp = 1.75 × 10−3 (open circles). Ith is the free-runing laser threshold.

Fig. 3
Fig. 3

(a) Calculated output puise from OB element with increasing electric bias current from I = 20 mA to I = 24 mA. The threshold current of the slave laser is Ith = 21.3 mA. The curve has been delayed for 1 ns for I = 21 mA, 2 ns for I = 22 mA, and 3 ns for I = 24 mA in order to have a better representation, (b) Calculated relative variation of the carrier population when the slave laser was biased at I = 20 mA (solid curve), 21 mA (dashed curve), 22 mA (dotted curve), and 24 mA (dashed–dotted curve).

Equations (3)

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d E d t = 1 2 [ Γ G ( N , P ) 1 / τ p ] E + i Δ Ω E + 1 τ i E ext ,
d P s d t = [ Γ G ( N , P ) 1 / τ p ] P s + R sp ,
d N d t = I / q υ R ( N ) G ( N , P ) P ,

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