Abstract

Single-pulse and cw measurements of the response of a semi-insulating CdZnTe/ZnTe multiple-quantum-well photorefractive device are presented. In single-pulse experiments, photodiffractive (absorption) gratings have been written with less than 1.8-μJ/cm² incident fluence, and a diffraction efficiency of 1.1% is obtained from the 1.56-μm active layer of the device. With an optimized structure, the ultimate response time of the device can be below 100 ps. In cw measurements a maximum diffraction efficiency of 1.35% is obtained.

© 1992 Optical Society of America

Resonant photodiffractive effect in semi-insulating multiple quantum wells

D. D. Nolte, D. H. Olson, G. E. Doran, W. H. Knox, and A. M. Glass
J. Opt. Soc. Am. B 7(11) 2217-2225 (1990)

Resonant photodiffractive four-wave mixing in semi-insulating GaAs/AlGaAs quantum wells

A. M. Glass, D. D. Nolte, D. H. Olson, G. E. Doran, D. S. Chemla, and W. H. Knox
Opt. Lett. 15(5) 264-266 (1990)

High-speed joint-transform optical image correlator using GaAs/AlGaAs semi-insulating multiple quantum wells and diode lasers

A. Partovi, A. M. Glass, T. H. Chiu, and D. T. H. Liu
Opt. Lett. 18(11) 906-908 (1993)

Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells

S. Iwamoto, H. Kageshima, T. Yuasa, M. Nishioka, T. Someya, Y. Arakawa, K. Fukutani, T. Shimura, and K. Kuroda
Opt. Lett. 24(5) 321-323 (1999)

Photorefractive quantum wells: transverse Franz–Keldysh geometry

Q. Wang, R. M. Brubaker, D. D. Nolte, and M.R. Melloch
J. Opt. Soc. Am. B 9(9) 1626-1641 (1992)