Abstract

A simple method for measuring the linewidth enhancement factor α of a semiconductor laser by optical injection locking is described. Without knowledge of the absolute values of detuning and the optical injection level, the value of α is evaluated from only changes in optical power in the stable optical injection-locking state. The value of α of a 0.83-μm channeled substrate planar laser is evaluated to be 2.65 ± 0.2. The measurement error of this method is also discussed.

© 1992 Optical Society of America

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