Abstract

A simple method for measuring the linewidth enhancement factor α of a semiconductor laser by optical injection locking is described. Without knowledge of the absolute values of detuning and the optical injection level, the value of α is evaluated from only changes in optical power in the stable optical injection-locking state. The value of α of a 0.83-μm channeled substrate planar laser is evaluated to be 2.65 ± 0.2. The measurement error of this method is also discussed.

© 1992 Optical Society of America

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References

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  1. C. H. Henry, IEEE J. Quantum Electron. QE-18, 259 (1982).
    [CrossRef]
  2. I. D. Henning, J. V. Collins, Electron. Lett. 19, 927 (1983).
    [CrossRef]
  3. M. Osinski, J. Buus, IEEE J. Quantum Electron. QE-23, 9 (1987).
    [CrossRef]
  4. C. H. Shin, M. Teshima, M. Ohtsu, Electron. Lett. 25, 27 (1989).
    [CrossRef]
  5. R. Hui, A. Meccozzi, A. D’ottavi, P. Spano, Electron. Lett. 26, 997 (1990).
    [CrossRef]
  6. F. Mogensen, H. Olesen, G. Jacobsen, IEEE J. Quantum Electron. QE-21, 784 (1985).
    [CrossRef]
  7. K. Hayashi, K. Iiyama, Y. Ida, K. Arai, Trans. Inst. Electr. Inf. Commun. Eng. E70, 306 (1987).

1990 (1)

R. Hui, A. Meccozzi, A. D’ottavi, P. Spano, Electron. Lett. 26, 997 (1990).
[CrossRef]

1989 (1)

C. H. Shin, M. Teshima, M. Ohtsu, Electron. Lett. 25, 27 (1989).
[CrossRef]

1987 (2)

M. Osinski, J. Buus, IEEE J. Quantum Electron. QE-23, 9 (1987).
[CrossRef]

K. Hayashi, K. Iiyama, Y. Ida, K. Arai, Trans. Inst. Electr. Inf. Commun. Eng. E70, 306 (1987).

1985 (1)

F. Mogensen, H. Olesen, G. Jacobsen, IEEE J. Quantum Electron. QE-21, 784 (1985).
[CrossRef]

1983 (1)

I. D. Henning, J. V. Collins, Electron. Lett. 19, 927 (1983).
[CrossRef]

1982 (1)

C. H. Henry, IEEE J. Quantum Electron. QE-18, 259 (1982).
[CrossRef]

Arai, K.

K. Hayashi, K. Iiyama, Y. Ida, K. Arai, Trans. Inst. Electr. Inf. Commun. Eng. E70, 306 (1987).

Buus, J.

M. Osinski, J. Buus, IEEE J. Quantum Electron. QE-23, 9 (1987).
[CrossRef]

Collins, J. V.

I. D. Henning, J. V. Collins, Electron. Lett. 19, 927 (1983).
[CrossRef]

D’ottavi, A.

R. Hui, A. Meccozzi, A. D’ottavi, P. Spano, Electron. Lett. 26, 997 (1990).
[CrossRef]

Hayashi, K.

K. Hayashi, K. Iiyama, Y. Ida, K. Arai, Trans. Inst. Electr. Inf. Commun. Eng. E70, 306 (1987).

Henning, I. D.

I. D. Henning, J. V. Collins, Electron. Lett. 19, 927 (1983).
[CrossRef]

Henry, C. H.

C. H. Henry, IEEE J. Quantum Electron. QE-18, 259 (1982).
[CrossRef]

Hui, R.

R. Hui, A. Meccozzi, A. D’ottavi, P. Spano, Electron. Lett. 26, 997 (1990).
[CrossRef]

Ida, Y.

K. Hayashi, K. Iiyama, Y. Ida, K. Arai, Trans. Inst. Electr. Inf. Commun. Eng. E70, 306 (1987).

Iiyama, K.

K. Hayashi, K. Iiyama, Y. Ida, K. Arai, Trans. Inst. Electr. Inf. Commun. Eng. E70, 306 (1987).

Jacobsen, G.

F. Mogensen, H. Olesen, G. Jacobsen, IEEE J. Quantum Electron. QE-21, 784 (1985).
[CrossRef]

Meccozzi, A.

R. Hui, A. Meccozzi, A. D’ottavi, P. Spano, Electron. Lett. 26, 997 (1990).
[CrossRef]

Mogensen, F.

F. Mogensen, H. Olesen, G. Jacobsen, IEEE J. Quantum Electron. QE-21, 784 (1985).
[CrossRef]

Ohtsu, M.

C. H. Shin, M. Teshima, M. Ohtsu, Electron. Lett. 25, 27 (1989).
[CrossRef]

Olesen, H.

F. Mogensen, H. Olesen, G. Jacobsen, IEEE J. Quantum Electron. QE-21, 784 (1985).
[CrossRef]

Osinski, M.

M. Osinski, J. Buus, IEEE J. Quantum Electron. QE-23, 9 (1987).
[CrossRef]

Shin, C. H.

C. H. Shin, M. Teshima, M. Ohtsu, Electron. Lett. 25, 27 (1989).
[CrossRef]

Spano, P.

R. Hui, A. Meccozzi, A. D’ottavi, P. Spano, Electron. Lett. 26, 997 (1990).
[CrossRef]

Teshima, M.

C. H. Shin, M. Teshima, M. Ohtsu, Electron. Lett. 25, 27 (1989).
[CrossRef]

Electron. Lett. (3)

C. H. Shin, M. Teshima, M. Ohtsu, Electron. Lett. 25, 27 (1989).
[CrossRef]

R. Hui, A. Meccozzi, A. D’ottavi, P. Spano, Electron. Lett. 26, 997 (1990).
[CrossRef]

I. D. Henning, J. V. Collins, Electron. Lett. 19, 927 (1983).
[CrossRef]

IEEE J. Quantum Electron. (3)

M. Osinski, J. Buus, IEEE J. Quantum Electron. QE-23, 9 (1987).
[CrossRef]

C. H. Henry, IEEE J. Quantum Electron. QE-18, 259 (1982).
[CrossRef]

F. Mogensen, H. Olesen, G. Jacobsen, IEEE J. Quantum Electron. QE-21, 784 (1985).
[CrossRef]

Trans. Inst. Electr. Inf. Commun. Eng. (1)

K. Hayashi, K. Iiyama, Y. Ida, K. Arai, Trans. Inst. Electr. Inf. Commun. Eng. E70, 306 (1987).

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Figures (5)

Fig. 1
Fig. 1

Calculated result of the normalized change in optical power of the slave laser in the stable locking state against detuning for α = 3.

Fig. 2
Fig. 2

Calculated measurement error as a function of the locking half-width for various values of α.

Fig. 3
Fig. 3

Schematic of the experimental setup.

Fig. 4
Fig. 4

Measured change in optical power of the slave laser against detuning for B/2π = 132 MHz.

Fig. 5
Fig. 5

Measured value of α against the locking half-width; α is evaluated to be 2.65 ± 0.2.

Equations (9)

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d E ( t ) d t = 1 2 G n Δ n ( t ) E ( t ) + 1 2 τ p E i cos ϕ ( t ) ,
d ϕ ( t ) d t = - Δ ω + 1 2 α G n Δ n ( t ) - 1 2 τ p E i E ( t ) sin ϕ ( t ) ,
d n ( t ) d t = P - n ( t ) τ s - G ( n ) E 2 ( t ) ,
f d = c / 2 n g L , 1 / τ p = [ a L + ln ( 1 / R ) ] ( c / n g L ) ,
I = I s + ( 1 / G n τ s ) ( I i / I ) 1 / 2 cos ϕ L 1 - ( I i / I ) 1 / 2 cos ϕ L ,
Δ ω = - B sin ( ϕ L + tan - 1 α ) ,
Δ I max = ( I i / I ) 1 / 2 1 - ( I i / I ) 1 / 2 ( 1 + 1 I s G n τ s ) ,
Δ I min = - ( I i / I ) 1 / 2 sin ( tan - 1 α ) 1 + ( I i / I ) 1 / 2 sin ( tan - 1 α ) ( 1 + 1 I s G n τ s ) .
α = [ ( Δ I max Δ I min ) 2 - 1 ] - 1 / 2 .

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