Abstract

The transverse electro-optic effect in antiferroelectric lead zirconate thin films grown on fused quartz is observed. The birefringence shift as a function of the external electric field exhibits a characteristic response that is related to the electric-field-induced antiferroelectric-to-ferroelectric structural transition.

© 1992 Optical Society of America

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  1. G. Shirane, E. Sawaguchi, Y. Takagi, Phys. Rev. 84, 476 (1951).
    [CrossRef]
  2. F. Jona, G. Shirane, F. Mazzi, R. Pepinsky, Phys. Rev. 105, 849 (1957).
    [CrossRef]
  3. B. A. Scott, G. Burns, J. Am. Ceram. Soc. 55, 331 (1972).
    [CrossRef]
  4. O. E. Fesenko, R. V. Kdesova, Yu G. Sindeev, Sov. Phys. Solid State 21, 668 (1979).
  5. M. T. Lanagan, J. H. Kim, S.-J. Jang, R. E. Newnham, J. Am. Ceram. Soc. 71, 311 (1988).
    [CrossRef]
  6. K. K. Li, F. Wang, G. H. Haertling, “Antiferroelectric lead zirconate thin films derived from an acetate precursor system,” J. Mater. Sci. (to be published).
  7. G. H. Haertling, Ferroelectrics 116, 51 (1991).
    [CrossRef]
  8. F. Wang, C. B. Juang, C. Bustamante, A. Y. Wu, in Proceedings of the 4th International SAMPE Electronics Conference (Society for the Advancement of Material and Process Engineering, Covina, Calif., 1990), p. 712.
  9. C. E. Land, IEEE Trans. Electron Devices ED-26, 1143 (1979).
    [CrossRef]
  10. G. H. Haertling, C. E. Land, J. Am. Ceram. Soc. 54, 1 (1971).
    [CrossRef]
  11. S. K. Kurtz, F. N. H. Robinson, Appl. Phys. Lett. 10, 62 (1967).
    [CrossRef]
  12. M. DiDomenico, S. H. Wemple, J. Appl. Phys. 40, 720 (1969).
    [CrossRef]
  13. G. W. Farnell, I. A. Cermak, P. Silvester, S. K. Wong, IEEE Trans. Sonics Ultrason. SU-17, 188 (1970).
    [CrossRef]
  14. R. C. Miller, Appl. Phys. Lett. 5, 17 (1964).
    [CrossRef]
  15. W. Pan, Q. Zhang, A. Bhalla, L. E. Cross, J. Am. Ceram. Soc. 72, 571 (1989).
    [CrossRef]

1991 (1)

G. H. Haertling, Ferroelectrics 116, 51 (1991).
[CrossRef]

1989 (1)

W. Pan, Q. Zhang, A. Bhalla, L. E. Cross, J. Am. Ceram. Soc. 72, 571 (1989).
[CrossRef]

1988 (1)

M. T. Lanagan, J. H. Kim, S.-J. Jang, R. E. Newnham, J. Am. Ceram. Soc. 71, 311 (1988).
[CrossRef]

1979 (2)

C. E. Land, IEEE Trans. Electron Devices ED-26, 1143 (1979).
[CrossRef]

O. E. Fesenko, R. V. Kdesova, Yu G. Sindeev, Sov. Phys. Solid State 21, 668 (1979).

1972 (1)

B. A. Scott, G. Burns, J. Am. Ceram. Soc. 55, 331 (1972).
[CrossRef]

1971 (1)

G. H. Haertling, C. E. Land, J. Am. Ceram. Soc. 54, 1 (1971).
[CrossRef]

1970 (1)

G. W. Farnell, I. A. Cermak, P. Silvester, S. K. Wong, IEEE Trans. Sonics Ultrason. SU-17, 188 (1970).
[CrossRef]

1969 (1)

M. DiDomenico, S. H. Wemple, J. Appl. Phys. 40, 720 (1969).
[CrossRef]

1967 (1)

S. K. Kurtz, F. N. H. Robinson, Appl. Phys. Lett. 10, 62 (1967).
[CrossRef]

1964 (1)

R. C. Miller, Appl. Phys. Lett. 5, 17 (1964).
[CrossRef]

1957 (1)

F. Jona, G. Shirane, F. Mazzi, R. Pepinsky, Phys. Rev. 105, 849 (1957).
[CrossRef]

1951 (1)

G. Shirane, E. Sawaguchi, Y. Takagi, Phys. Rev. 84, 476 (1951).
[CrossRef]

Bhalla, A.

W. Pan, Q. Zhang, A. Bhalla, L. E. Cross, J. Am. Ceram. Soc. 72, 571 (1989).
[CrossRef]

Burns, G.

B. A. Scott, G. Burns, J. Am. Ceram. Soc. 55, 331 (1972).
[CrossRef]

Bustamante, C.

F. Wang, C. B. Juang, C. Bustamante, A. Y. Wu, in Proceedings of the 4th International SAMPE Electronics Conference (Society for the Advancement of Material and Process Engineering, Covina, Calif., 1990), p. 712.

Cermak, I. A.

G. W. Farnell, I. A. Cermak, P. Silvester, S. K. Wong, IEEE Trans. Sonics Ultrason. SU-17, 188 (1970).
[CrossRef]

Cross, L. E.

W. Pan, Q. Zhang, A. Bhalla, L. E. Cross, J. Am. Ceram. Soc. 72, 571 (1989).
[CrossRef]

DiDomenico, M.

M. DiDomenico, S. H. Wemple, J. Appl. Phys. 40, 720 (1969).
[CrossRef]

Farnell, G. W.

G. W. Farnell, I. A. Cermak, P. Silvester, S. K. Wong, IEEE Trans. Sonics Ultrason. SU-17, 188 (1970).
[CrossRef]

Fesenko, O. E.

O. E. Fesenko, R. V. Kdesova, Yu G. Sindeev, Sov. Phys. Solid State 21, 668 (1979).

Haertling, G. H.

G. H. Haertling, Ferroelectrics 116, 51 (1991).
[CrossRef]

G. H. Haertling, C. E. Land, J. Am. Ceram. Soc. 54, 1 (1971).
[CrossRef]

K. K. Li, F. Wang, G. H. Haertling, “Antiferroelectric lead zirconate thin films derived from an acetate precursor system,” J. Mater. Sci. (to be published).

Jang, S.-J.

M. T. Lanagan, J. H. Kim, S.-J. Jang, R. E. Newnham, J. Am. Ceram. Soc. 71, 311 (1988).
[CrossRef]

Jona, F.

F. Jona, G. Shirane, F. Mazzi, R. Pepinsky, Phys. Rev. 105, 849 (1957).
[CrossRef]

Juang, C. B.

F. Wang, C. B. Juang, C. Bustamante, A. Y. Wu, in Proceedings of the 4th International SAMPE Electronics Conference (Society for the Advancement of Material and Process Engineering, Covina, Calif., 1990), p. 712.

Kdesova, R. V.

O. E. Fesenko, R. V. Kdesova, Yu G. Sindeev, Sov. Phys. Solid State 21, 668 (1979).

Kim, J. H.

M. T. Lanagan, J. H. Kim, S.-J. Jang, R. E. Newnham, J. Am. Ceram. Soc. 71, 311 (1988).
[CrossRef]

Kurtz, S. K.

S. K. Kurtz, F. N. H. Robinson, Appl. Phys. Lett. 10, 62 (1967).
[CrossRef]

Lanagan, M. T.

M. T. Lanagan, J. H. Kim, S.-J. Jang, R. E. Newnham, J. Am. Ceram. Soc. 71, 311 (1988).
[CrossRef]

Land, C. E.

C. E. Land, IEEE Trans. Electron Devices ED-26, 1143 (1979).
[CrossRef]

G. H. Haertling, C. E. Land, J. Am. Ceram. Soc. 54, 1 (1971).
[CrossRef]

Li, K. K.

K. K. Li, F. Wang, G. H. Haertling, “Antiferroelectric lead zirconate thin films derived from an acetate precursor system,” J. Mater. Sci. (to be published).

Mazzi, F.

F. Jona, G. Shirane, F. Mazzi, R. Pepinsky, Phys. Rev. 105, 849 (1957).
[CrossRef]

Miller, R. C.

R. C. Miller, Appl. Phys. Lett. 5, 17 (1964).
[CrossRef]

Newnham, R. E.

M. T. Lanagan, J. H. Kim, S.-J. Jang, R. E. Newnham, J. Am. Ceram. Soc. 71, 311 (1988).
[CrossRef]

Pan, W.

W. Pan, Q. Zhang, A. Bhalla, L. E. Cross, J. Am. Ceram. Soc. 72, 571 (1989).
[CrossRef]

Pepinsky, R.

F. Jona, G. Shirane, F. Mazzi, R. Pepinsky, Phys. Rev. 105, 849 (1957).
[CrossRef]

Robinson, F. N. H.

S. K. Kurtz, F. N. H. Robinson, Appl. Phys. Lett. 10, 62 (1967).
[CrossRef]

Sawaguchi, E.

G. Shirane, E. Sawaguchi, Y. Takagi, Phys. Rev. 84, 476 (1951).
[CrossRef]

Scott, B. A.

B. A. Scott, G. Burns, J. Am. Ceram. Soc. 55, 331 (1972).
[CrossRef]

Shirane, G.

F. Jona, G. Shirane, F. Mazzi, R. Pepinsky, Phys. Rev. 105, 849 (1957).
[CrossRef]

G. Shirane, E. Sawaguchi, Y. Takagi, Phys. Rev. 84, 476 (1951).
[CrossRef]

Silvester, P.

G. W. Farnell, I. A. Cermak, P. Silvester, S. K. Wong, IEEE Trans. Sonics Ultrason. SU-17, 188 (1970).
[CrossRef]

Sindeev, Yu G.

O. E. Fesenko, R. V. Kdesova, Yu G. Sindeev, Sov. Phys. Solid State 21, 668 (1979).

Takagi, Y.

G. Shirane, E. Sawaguchi, Y. Takagi, Phys. Rev. 84, 476 (1951).
[CrossRef]

Wang, F.

K. K. Li, F. Wang, G. H. Haertling, “Antiferroelectric lead zirconate thin films derived from an acetate precursor system,” J. Mater. Sci. (to be published).

F. Wang, C. B. Juang, C. Bustamante, A. Y. Wu, in Proceedings of the 4th International SAMPE Electronics Conference (Society for the Advancement of Material and Process Engineering, Covina, Calif., 1990), p. 712.

Wemple, S. H.

M. DiDomenico, S. H. Wemple, J. Appl. Phys. 40, 720 (1969).
[CrossRef]

Wong, S. K.

G. W. Farnell, I. A. Cermak, P. Silvester, S. K. Wong, IEEE Trans. Sonics Ultrason. SU-17, 188 (1970).
[CrossRef]

Wu, A. Y.

F. Wang, C. B. Juang, C. Bustamante, A. Y. Wu, in Proceedings of the 4th International SAMPE Electronics Conference (Society for the Advancement of Material and Process Engineering, Covina, Calif., 1990), p. 712.

Zhang, Q.

W. Pan, Q. Zhang, A. Bhalla, L. E. Cross, J. Am. Ceram. Soc. 72, 571 (1989).
[CrossRef]

Appl. Phys. Lett. (2)

S. K. Kurtz, F. N. H. Robinson, Appl. Phys. Lett. 10, 62 (1967).
[CrossRef]

R. C. Miller, Appl. Phys. Lett. 5, 17 (1964).
[CrossRef]

Ferroelectrics (1)

G. H. Haertling, Ferroelectrics 116, 51 (1991).
[CrossRef]

IEEE Trans. Electron Devices (1)

C. E. Land, IEEE Trans. Electron Devices ED-26, 1143 (1979).
[CrossRef]

IEEE Trans. Sonics Ultrason. (1)

G. W. Farnell, I. A. Cermak, P. Silvester, S. K. Wong, IEEE Trans. Sonics Ultrason. SU-17, 188 (1970).
[CrossRef]

J. Am. Ceram. Soc. (4)

W. Pan, Q. Zhang, A. Bhalla, L. E. Cross, J. Am. Ceram. Soc. 72, 571 (1989).
[CrossRef]

G. H. Haertling, C. E. Land, J. Am. Ceram. Soc. 54, 1 (1971).
[CrossRef]

M. T. Lanagan, J. H. Kim, S.-J. Jang, R. E. Newnham, J. Am. Ceram. Soc. 71, 311 (1988).
[CrossRef]

B. A. Scott, G. Burns, J. Am. Ceram. Soc. 55, 331 (1972).
[CrossRef]

J. Appl. Phys. (1)

M. DiDomenico, S. H. Wemple, J. Appl. Phys. 40, 720 (1969).
[CrossRef]

Phys. Rev. (2)

G. Shirane, E. Sawaguchi, Y. Takagi, Phys. Rev. 84, 476 (1951).
[CrossRef]

F. Jona, G. Shirane, F. Mazzi, R. Pepinsky, Phys. Rev. 105, 849 (1957).
[CrossRef]

Sov. Phys. Solid State (1)

O. E. Fesenko, R. V. Kdesova, Yu G. Sindeev, Sov. Phys. Solid State 21, 668 (1979).

Other (2)

K. K. Li, F. Wang, G. H. Haertling, “Antiferroelectric lead zirconate thin films derived from an acetate precursor system,” J. Mater. Sci. (to be published).

F. Wang, C. B. Juang, C. Bustamante, A. Y. Wu, in Proceedings of the 4th International SAMPE Electronics Conference (Society for the Advancement of Material and Process Engineering, Covina, Calif., 1990), p. 712.

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Figures (3)

Fig. 1
Fig. 1

Measured birefringence shift Δn as a function of the applied electric field E in a lead zirconate thin film on fused quartz.

Fig. 2
Fig. 2

Measured dc and ac (inset) dielectric property of a lead zirconate thin film on a Pt/Ti-coated silicon substrate. The direction of the electric field is perpendicular to the thin film. The horizontal and vertical scales for the ac loop are 15.4 kV/mm per division and 15.1 μC/cm2 per division, respectively.

Fig. 3
Fig. 3

Prediction of the transverse electro-optic property of a material under AFE–FE phase transition. The solid curve for Δn versus E is calculated from the dashed curve for P versus E by using relation (1).

Equations (1)

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Δ n [ E + 4 π 3 P ( E ) ] 2 ,

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