Abstract

A Cr:LiSrAlF6 laser is diode pumped with both commercial 10-mW visible laser diodes and a higher-power 100-mW cw, 265-mW pulsed diode. Polarization combination of pump diodes to reach threshold is demonstrated with two low-power lasers. Pumping with the high-power diode produced powers of 19.9 mW cw and 78 mW pulsed. Details of the Cr:LiSrAlF6 crystal growth and high-power diode architecture are presented, along with optical characterization data for the laser resonator. Passive losses in the crystal are less than 0.1% cm−1.

© 1991 Optical Society of America

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  1. S. A. Payne, L. L. Chase, L. K. Smith, W. L. Kway, H. W. Newkirk, J. Appl. Phys. 66, 1051 (1989).
    [Crossref]
  2. R. Scheps, B. M. Gately, J. F. Myers, J. S. Krasinski, D. F. Heller, Appl. Phys. Lett. 56, 2288 (1990).
    [Crossref]
  3. R. Scheps, “Diode pumping of tunable Cr-doped lasers,” Proc. Soc. Photo-Opt. Instrum. Eng. (to be published).
  4. G. J. Dixon, Q. Zhang, B. H. T. Chai, presented at the Sixth Interdisciplinary Laser Sciences Conference, Minneapolis, Minn., September 1990.
  5. R. Scheps, “Cr:LiCaAlF6 laser pumped by visible laser diodes,” IEEE J. Quantum Electron. (to be published).
  6. M. Long, R. C. Morris, B. H. T. Chai, presented at the American Conference on Crystal Growth/East-3, Atlantic City, N.J., October 1989.
  7. H. B. Serreze, Y. C. Chen, “Low threshold strained layer GaInP/AlGaInP GRINSCH visible diode lasers,” IEEE Photon. Technol. Lett. (to be published).
  8. R. Scheps, J. F. Myers, S. A. Payne, IEEE Photon. Technol. Lett. 2, 626 (1990).
    [Crossref]
  9. D. Findlay, R. A. Clay, Phys. Lett. 20, 277 (1966).
    [Crossref]

1990 (2)

R. Scheps, B. M. Gately, J. F. Myers, J. S. Krasinski, D. F. Heller, Appl. Phys. Lett. 56, 2288 (1990).
[Crossref]

R. Scheps, J. F. Myers, S. A. Payne, IEEE Photon. Technol. Lett. 2, 626 (1990).
[Crossref]

1989 (1)

S. A. Payne, L. L. Chase, L. K. Smith, W. L. Kway, H. W. Newkirk, J. Appl. Phys. 66, 1051 (1989).
[Crossref]

1966 (1)

D. Findlay, R. A. Clay, Phys. Lett. 20, 277 (1966).
[Crossref]

Chai, B. H. T.

G. J. Dixon, Q. Zhang, B. H. T. Chai, presented at the Sixth Interdisciplinary Laser Sciences Conference, Minneapolis, Minn., September 1990.

M. Long, R. C. Morris, B. H. T. Chai, presented at the American Conference on Crystal Growth/East-3, Atlantic City, N.J., October 1989.

Chase, L. L.

S. A. Payne, L. L. Chase, L. K. Smith, W. L. Kway, H. W. Newkirk, J. Appl. Phys. 66, 1051 (1989).
[Crossref]

Chen, Y. C.

H. B. Serreze, Y. C. Chen, “Low threshold strained layer GaInP/AlGaInP GRINSCH visible diode lasers,” IEEE Photon. Technol. Lett. (to be published).

Clay, R. A.

D. Findlay, R. A. Clay, Phys. Lett. 20, 277 (1966).
[Crossref]

Dixon, G. J.

G. J. Dixon, Q. Zhang, B. H. T. Chai, presented at the Sixth Interdisciplinary Laser Sciences Conference, Minneapolis, Minn., September 1990.

Findlay, D.

D. Findlay, R. A. Clay, Phys. Lett. 20, 277 (1966).
[Crossref]

Gately, B. M.

R. Scheps, B. M. Gately, J. F. Myers, J. S. Krasinski, D. F. Heller, Appl. Phys. Lett. 56, 2288 (1990).
[Crossref]

Heller, D. F.

R. Scheps, B. M. Gately, J. F. Myers, J. S. Krasinski, D. F. Heller, Appl. Phys. Lett. 56, 2288 (1990).
[Crossref]

Krasinski, J. S.

R. Scheps, B. M. Gately, J. F. Myers, J. S. Krasinski, D. F. Heller, Appl. Phys. Lett. 56, 2288 (1990).
[Crossref]

Kway, W. L.

S. A. Payne, L. L. Chase, L. K. Smith, W. L. Kway, H. W. Newkirk, J. Appl. Phys. 66, 1051 (1989).
[Crossref]

Long, M.

M. Long, R. C. Morris, B. H. T. Chai, presented at the American Conference on Crystal Growth/East-3, Atlantic City, N.J., October 1989.

Morris, R. C.

M. Long, R. C. Morris, B. H. T. Chai, presented at the American Conference on Crystal Growth/East-3, Atlantic City, N.J., October 1989.

Myers, J. F.

R. Scheps, B. M. Gately, J. F. Myers, J. S. Krasinski, D. F. Heller, Appl. Phys. Lett. 56, 2288 (1990).
[Crossref]

R. Scheps, J. F. Myers, S. A. Payne, IEEE Photon. Technol. Lett. 2, 626 (1990).
[Crossref]

Newkirk, H. W.

S. A. Payne, L. L. Chase, L. K. Smith, W. L. Kway, H. W. Newkirk, J. Appl. Phys. 66, 1051 (1989).
[Crossref]

Payne, S. A.

R. Scheps, J. F. Myers, S. A. Payne, IEEE Photon. Technol. Lett. 2, 626 (1990).
[Crossref]

S. A. Payne, L. L. Chase, L. K. Smith, W. L. Kway, H. W. Newkirk, J. Appl. Phys. 66, 1051 (1989).
[Crossref]

Scheps, R.

R. Scheps, B. M. Gately, J. F. Myers, J. S. Krasinski, D. F. Heller, Appl. Phys. Lett. 56, 2288 (1990).
[Crossref]

R. Scheps, J. F. Myers, S. A. Payne, IEEE Photon. Technol. Lett. 2, 626 (1990).
[Crossref]

R. Scheps, “Cr:LiCaAlF6 laser pumped by visible laser diodes,” IEEE J. Quantum Electron. (to be published).

R. Scheps, “Diode pumping of tunable Cr-doped lasers,” Proc. Soc. Photo-Opt. Instrum. Eng. (to be published).

Serreze, H. B.

H. B. Serreze, Y. C. Chen, “Low threshold strained layer GaInP/AlGaInP GRINSCH visible diode lasers,” IEEE Photon. Technol. Lett. (to be published).

Smith, L. K.

S. A. Payne, L. L. Chase, L. K. Smith, W. L. Kway, H. W. Newkirk, J. Appl. Phys. 66, 1051 (1989).
[Crossref]

Zhang, Q.

G. J. Dixon, Q. Zhang, B. H. T. Chai, presented at the Sixth Interdisciplinary Laser Sciences Conference, Minneapolis, Minn., September 1990.

Appl. Phys. Lett. (1)

R. Scheps, B. M. Gately, J. F. Myers, J. S. Krasinski, D. F. Heller, Appl. Phys. Lett. 56, 2288 (1990).
[Crossref]

IEEE Photon. Technol. Lett. (1)

R. Scheps, J. F. Myers, S. A. Payne, IEEE Photon. Technol. Lett. 2, 626 (1990).
[Crossref]

J. Appl. Phys. (1)

S. A. Payne, L. L. Chase, L. K. Smith, W. L. Kway, H. W. Newkirk, J. Appl. Phys. 66, 1051 (1989).
[Crossref]

Phys. Lett. (1)

D. Findlay, R. A. Clay, Phys. Lett. 20, 277 (1966).
[Crossref]

Other (5)

R. Scheps, “Diode pumping of tunable Cr-doped lasers,” Proc. Soc. Photo-Opt. Instrum. Eng. (to be published).

G. J. Dixon, Q. Zhang, B. H. T. Chai, presented at the Sixth Interdisciplinary Laser Sciences Conference, Minneapolis, Minn., September 1990.

R. Scheps, “Cr:LiCaAlF6 laser pumped by visible laser diodes,” IEEE J. Quantum Electron. (to be published).

M. Long, R. C. Morris, B. H. T. Chai, presented at the American Conference on Crystal Growth/East-3, Atlantic City, N.J., October 1989.

H. B. Serreze, Y. C. Chen, “Low threshold strained layer GaInP/AlGaInP GRINSCH visible diode lasers,” IEEE Photon. Technol. Lett. (to be published).

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Figures (3)

Fig. 1
Fig. 1

Configuration of the pump and resonator optics. Two polarizing beam combiner cubes (PBC’s) are used to permit three optical sources to pump the Cr:LiSAF laser simultaneously. The λ/2 plate rotates the polarization of the two sources transmitted by PBC1, determining the fraction of each transmitted by PBC2.

Fig. 2
Fig. 2

Distribution of optical scattering sites in a 12-mm-diameter, 2 at. % doped Cr:LiSAF crystal. Illumination by a quartz halogen lamp enters the crystal at the right side of the photograph. The crystal sample used in this research was fabricated from the center section of the crystal shown here.

Fig. 3
Fig. 3

Q-switched pulse shape of the Cr:LiSAF laser operating at a repetition frequency of 3 kHz. The output mirror is 98.5% reflecting, and the cw pump power from the GRINSCH diode is 106 mW. The horizontal scale is 50 ns/ division, and the FWHM of the output pulse is 75 ns.

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