Abstract

The effect of ambient temperature on the performance of a GaAs/AlGaAs heterojunction bipolar transistor waveguide structure carrier-injected optical intensity modulator/switch is discussed. An increase in the temperature increases the achievable optical modulation ratio at the expense of increased absorption loss, and vice versa. Analysis also shows that for practical use a tolerable temperature change should be no more than approximately 10°C.

© 1991 Optical Society of America

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