Abstract

Low-loss waveguiding at λ = 1.3 μm has been observed in a partially strained, 10-μm-thick, single-crystal layer of Ge0.1Si0.9 grown by chemical-vapor deposition upon an intrinsic (100) silicon substrate. The TM-mode propagation loss in the multimode planar guide was 1.9 dB/cm.

© 1990 Optical Society of America

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References

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  1. R. A. Soref, J. P. Lorenzo, IEEE J. Quantum Electron. QE-22, 873 (1986).
    [CrossRef]
  2. T. P. Pearsall, H. Temkin, J. C. Beam, S. Luryi, IEEE Electron Devices Lett. EDL-7, 330 (1986).
    [CrossRef]
  3. H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, J. C. Bean, Appl. Phys. Lett. 49, 809 (1986).
    [CrossRef]
  4. L. R. Doolittle, Nucl. Instrum. Methods B9, 344 (1985).
  5. D. F. Edwards, in Handbook of Optical Constants of Solids, E. D. Palik, ed. (Academic, Orlando, Fla., 1985), Pt. II, p. 566.
  6. R. Braunstein, A. R. Moore, F. Herman, Phys. Rev. 109, 695 (1958).
    [CrossRef]
  7. D. V. Lang, R. People, J. C. Bean, A. M. Sergent, Appl. Phys. Lett. 47, 1333 (1985).
    [CrossRef]
  8. Y. Okada, R. H. Yan, L. A. Coldren, J. L. Merz, K. Tada, IEEE J. Quantum Electron. 25, 713 (1989).
    [CrossRef]
  9. R. A. Soref, F. Namavar, J. P. Lorenzo, Proc. Soc. Photo-Opt. Instrum. Eng. 1177, 175 (1989).

1989 (2)

Y. Okada, R. H. Yan, L. A. Coldren, J. L. Merz, K. Tada, IEEE J. Quantum Electron. 25, 713 (1989).
[CrossRef]

R. A. Soref, F. Namavar, J. P. Lorenzo, Proc. Soc. Photo-Opt. Instrum. Eng. 1177, 175 (1989).

1986 (3)

R. A. Soref, J. P. Lorenzo, IEEE J. Quantum Electron. QE-22, 873 (1986).
[CrossRef]

T. P. Pearsall, H. Temkin, J. C. Beam, S. Luryi, IEEE Electron Devices Lett. EDL-7, 330 (1986).
[CrossRef]

H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, J. C. Bean, Appl. Phys. Lett. 49, 809 (1986).
[CrossRef]

1985 (2)

L. R. Doolittle, Nucl. Instrum. Methods B9, 344 (1985).

D. V. Lang, R. People, J. C. Bean, A. M. Sergent, Appl. Phys. Lett. 47, 1333 (1985).
[CrossRef]

1958 (1)

R. Braunstein, A. R. Moore, F. Herman, Phys. Rev. 109, 695 (1958).
[CrossRef]

Antreasyan, A.

H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, J. C. Bean, Appl. Phys. Lett. 49, 809 (1986).
[CrossRef]

Beam, J. C.

T. P. Pearsall, H. Temkin, J. C. Beam, S. Luryi, IEEE Electron Devices Lett. EDL-7, 330 (1986).
[CrossRef]

Bean, J. C.

H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, J. C. Bean, Appl. Phys. Lett. 49, 809 (1986).
[CrossRef]

D. V. Lang, R. People, J. C. Bean, A. M. Sergent, Appl. Phys. Lett. 47, 1333 (1985).
[CrossRef]

Braunstein, R.

R. Braunstein, A. R. Moore, F. Herman, Phys. Rev. 109, 695 (1958).
[CrossRef]

Coldren, L. A.

Y. Okada, R. H. Yan, L. A. Coldren, J. L. Merz, K. Tada, IEEE J. Quantum Electron. 25, 713 (1989).
[CrossRef]

Doolittle, L. R.

L. R. Doolittle, Nucl. Instrum. Methods B9, 344 (1985).

Edwards, D. F.

D. F. Edwards, in Handbook of Optical Constants of Solids, E. D. Palik, ed. (Academic, Orlando, Fla., 1985), Pt. II, p. 566.

Herman, F.

R. Braunstein, A. R. Moore, F. Herman, Phys. Rev. 109, 695 (1958).
[CrossRef]

Lang, D. V.

D. V. Lang, R. People, J. C. Bean, A. M. Sergent, Appl. Phys. Lett. 47, 1333 (1985).
[CrossRef]

Lorenzo, J. P.

R. A. Soref, F. Namavar, J. P. Lorenzo, Proc. Soc. Photo-Opt. Instrum. Eng. 1177, 175 (1989).

R. A. Soref, J. P. Lorenzo, IEEE J. Quantum Electron. QE-22, 873 (1986).
[CrossRef]

Luryi, S.

T. P. Pearsall, H. Temkin, J. C. Beam, S. Luryi, IEEE Electron Devices Lett. EDL-7, 330 (1986).
[CrossRef]

Merz, J. L.

Y. Okada, R. H. Yan, L. A. Coldren, J. L. Merz, K. Tada, IEEE J. Quantum Electron. 25, 713 (1989).
[CrossRef]

Moore, A. R.

R. Braunstein, A. R. Moore, F. Herman, Phys. Rev. 109, 695 (1958).
[CrossRef]

Namavar, F.

R. A. Soref, F. Namavar, J. P. Lorenzo, Proc. Soc. Photo-Opt. Instrum. Eng. 1177, 175 (1989).

Okada, Y.

Y. Okada, R. H. Yan, L. A. Coldren, J. L. Merz, K. Tada, IEEE J. Quantum Electron. 25, 713 (1989).
[CrossRef]

Olsson, N. A.

H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, J. C. Bean, Appl. Phys. Lett. 49, 809 (1986).
[CrossRef]

Pearsall, T. P.

H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, J. C. Bean, Appl. Phys. Lett. 49, 809 (1986).
[CrossRef]

T. P. Pearsall, H. Temkin, J. C. Beam, S. Luryi, IEEE Electron Devices Lett. EDL-7, 330 (1986).
[CrossRef]

People, R.

D. V. Lang, R. People, J. C. Bean, A. M. Sergent, Appl. Phys. Lett. 47, 1333 (1985).
[CrossRef]

Sergent, A. M.

D. V. Lang, R. People, J. C. Bean, A. M. Sergent, Appl. Phys. Lett. 47, 1333 (1985).
[CrossRef]

Soref, R. A.

R. A. Soref, F. Namavar, J. P. Lorenzo, Proc. Soc. Photo-Opt. Instrum. Eng. 1177, 175 (1989).

R. A. Soref, J. P. Lorenzo, IEEE J. Quantum Electron. QE-22, 873 (1986).
[CrossRef]

Tada, K.

Y. Okada, R. H. Yan, L. A. Coldren, J. L. Merz, K. Tada, IEEE J. Quantum Electron. 25, 713 (1989).
[CrossRef]

Temkin, H.

T. P. Pearsall, H. Temkin, J. C. Beam, S. Luryi, IEEE Electron Devices Lett. EDL-7, 330 (1986).
[CrossRef]

H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, J. C. Bean, Appl. Phys. Lett. 49, 809 (1986).
[CrossRef]

Yan, R. H.

Y. Okada, R. H. Yan, L. A. Coldren, J. L. Merz, K. Tada, IEEE J. Quantum Electron. 25, 713 (1989).
[CrossRef]

Appl. Phys. Lett. (2)

H. Temkin, A. Antreasyan, N. A. Olsson, T. P. Pearsall, J. C. Bean, Appl. Phys. Lett. 49, 809 (1986).
[CrossRef]

D. V. Lang, R. People, J. C. Bean, A. M. Sergent, Appl. Phys. Lett. 47, 1333 (1985).
[CrossRef]

IEEE Electron Devices Lett. (1)

T. P. Pearsall, H. Temkin, J. C. Beam, S. Luryi, IEEE Electron Devices Lett. EDL-7, 330 (1986).
[CrossRef]

IEEE J. Quantum Electron. (2)

R. A. Soref, J. P. Lorenzo, IEEE J. Quantum Electron. QE-22, 873 (1986).
[CrossRef]

Y. Okada, R. H. Yan, L. A. Coldren, J. L. Merz, K. Tada, IEEE J. Quantum Electron. 25, 713 (1989).
[CrossRef]

Nucl. Instrum. Methods (1)

L. R. Doolittle, Nucl. Instrum. Methods B9, 344 (1985).

Phys. Rev. (1)

R. Braunstein, A. R. Moore, F. Herman, Phys. Rev. 109, 695 (1958).
[CrossRef]

Proc. Soc. Photo-Opt. Instrum. Eng. (1)

R. A. Soref, F. Namavar, J. P. Lorenzo, Proc. Soc. Photo-Opt. Instrum. Eng. 1177, 175 (1989).

Other (1)

D. F. Edwards, in Handbook of Optical Constants of Solids, E. D. Palik, ed. (Academic, Orlando, Fla., 1985), Pt. II, p. 566.

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Figures (3)

Fig. 1
Fig. 1

Rib waveguide etched in a partially strained layer of GexSi1−x grown on intrinsic Si.

Fig. 2
Fig. 2

1.86-MeV He+ Rutherford backscattering of a 10-μm-thick crystalline GeSi layer codeposited upon (100) Si. The crosses are data points. The solid curve is a computer-simulated spectrum.

Fig. 3
Fig. 3

Refractive index of an unstrained GexSi1−x epilayer as approximated by a rigid translation of the bulk-Si dispersion curve. The boxes are Si data points obtained from Ref. 5. The lower curve was fitted to those points.

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