Abstract

A new scheme of energy storage in single-quantum-well semiconductor lasers is analyzed. This scheme involves the storage of the majority of injected carriers in the continuum states of the surrounding bulk material, in which the carrier density is diluted and the higher-order carrier-density-dependent recombination processes are much smaller. This allows the inversion level to build up to a much higher level during the pumping stage of Q switching. The possibility of using indirect-band-gap semiconductors for carrier storage is also proposed.

© 1990 Optical Society of America

Threshold current of extremely narrow semiconductor quantum-well lasers

Eli Kapon
Opt. Lett. 15(14) 801-803 (1990)

Nonlinear-optical absorption in InGaAs/InAlAs multiple quantum wells

D. A. H. Mace, M. A. Fisher, M. G. Burt, E. G. Scott, and M. J. Adams
Opt. Lett. 15(3) 189-191 (1990)

Resonant photodiffractive four-wave mixing in semi-insulating GaAs/AlGaAs quantum wells

A. M. Glass, D. D. Nolte, D. H. Olson, G. E. Doran, D. S. Chemla, and W. H. Knox
Opt. Lett. 15(5) 264-266 (1990)

Femtosecond KCl:Li and RbCl:Li color-center lasers near 2.8 μm with a HgCdTe multiple-quantum-well saturable absorber

C. L. Cesar, M. N. Islam, C. E. Soccolich, R. D. Feldman, R. F. Austin, and K. R. German
Opt. Lett. 15(20) 1147-1149 (1990)

Carrier-induced refractive-index change in quantum-well lasers

Weng W. Chow and Dave Depatie
Opt. Lett. 13(4) 303-305 (1988)