Abstract

The microfabrication of a blazed reflection micro-Fresnel lens (RMFL) using electron-beam writing and dry development is proposed and demonstrated. The electron-beam-written resist film made of polymethyl isopropenyl ketone and an aromatic azido compound achieved the blazed structure by O2 plasma development. The surface roughness of the RMFL was improved without the bridge and scum. The fabricated RMFL exhibited the diffraction-limited characteristics. A high efficiency of 71% was obtained at a period of 10 μm. The margin for the electron-beam writing condition to achieve high efficiency was much broader than in the conventional process. This process would be effective for the fabrication of blazed RMFL's and other grating components.

© 1990 Optical Society of America

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References

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  1. T. Fujita, H. Nishihara, J. Koyama, Opt. Lett. 7, 578 (1982).
    [CrossRef] [PubMed]
  2. T. Shiono, K. Setsune, O. Yamazaki, Trans. Inst. Electron. Inf. Commun. Eng. Jpn. J70-C, 1044 (1987).
  3. T. Shiono, K. Setsune, O. Yamazaki, K. Wasa, Appl. Opt. 26, 587 (1987).
    [CrossRef] [PubMed]
  4. E. Enomoto, H. Nishihara, J. Koyama, Inst. Electron. Inf. Commun. Eng. Tech. Rep. OQE83-89, 15 (1983).
  5. T. Shiono, M. Kitagawa, K. Setsune, T. Mitsuyu, Appl. Opt. 28, 3434 (1989).
    [CrossRef] [PubMed]
  6. M. Tsuda, S. Oikawa, M. Yabuta, A. Yakota, H. Nakane, K. Yamashita, K. Gamo, S. Namba, J. Vac. Sci. Technol. B 3, 481 (1985).
    [CrossRef]

1989 (1)

1987 (2)

T. Shiono, K. Setsune, O. Yamazaki, Trans. Inst. Electron. Inf. Commun. Eng. Jpn. J70-C, 1044 (1987).

T. Shiono, K. Setsune, O. Yamazaki, K. Wasa, Appl. Opt. 26, 587 (1987).
[CrossRef] [PubMed]

1985 (1)

M. Tsuda, S. Oikawa, M. Yabuta, A. Yakota, H. Nakane, K. Yamashita, K. Gamo, S. Namba, J. Vac. Sci. Technol. B 3, 481 (1985).
[CrossRef]

1983 (1)

E. Enomoto, H. Nishihara, J. Koyama, Inst. Electron. Inf. Commun. Eng. Tech. Rep. OQE83-89, 15 (1983).

1982 (1)

Enomoto, E.

E. Enomoto, H. Nishihara, J. Koyama, Inst. Electron. Inf. Commun. Eng. Tech. Rep. OQE83-89, 15 (1983).

Fujita, T.

Gamo, K.

M. Tsuda, S. Oikawa, M. Yabuta, A. Yakota, H. Nakane, K. Yamashita, K. Gamo, S. Namba, J. Vac. Sci. Technol. B 3, 481 (1985).
[CrossRef]

Kitagawa, M.

Koyama, J.

E. Enomoto, H. Nishihara, J. Koyama, Inst. Electron. Inf. Commun. Eng. Tech. Rep. OQE83-89, 15 (1983).

T. Fujita, H. Nishihara, J. Koyama, Opt. Lett. 7, 578 (1982).
[CrossRef] [PubMed]

Mitsuyu, T.

Nakane, H.

M. Tsuda, S. Oikawa, M. Yabuta, A. Yakota, H. Nakane, K. Yamashita, K. Gamo, S. Namba, J. Vac. Sci. Technol. B 3, 481 (1985).
[CrossRef]

Namba, S.

M. Tsuda, S. Oikawa, M. Yabuta, A. Yakota, H. Nakane, K. Yamashita, K. Gamo, S. Namba, J. Vac. Sci. Technol. B 3, 481 (1985).
[CrossRef]

Nishihara, H.

E. Enomoto, H. Nishihara, J. Koyama, Inst. Electron. Inf. Commun. Eng. Tech. Rep. OQE83-89, 15 (1983).

T. Fujita, H. Nishihara, J. Koyama, Opt. Lett. 7, 578 (1982).
[CrossRef] [PubMed]

Oikawa, S.

M. Tsuda, S. Oikawa, M. Yabuta, A. Yakota, H. Nakane, K. Yamashita, K. Gamo, S. Namba, J. Vac. Sci. Technol. B 3, 481 (1985).
[CrossRef]

Setsune, K.

Shiono, T.

Tsuda, M.

M. Tsuda, S. Oikawa, M. Yabuta, A. Yakota, H. Nakane, K. Yamashita, K. Gamo, S. Namba, J. Vac. Sci. Technol. B 3, 481 (1985).
[CrossRef]

Wasa, K.

Yabuta, M.

M. Tsuda, S. Oikawa, M. Yabuta, A. Yakota, H. Nakane, K. Yamashita, K. Gamo, S. Namba, J. Vac. Sci. Technol. B 3, 481 (1985).
[CrossRef]

Yakota, A.

M. Tsuda, S. Oikawa, M. Yabuta, A. Yakota, H. Nakane, K. Yamashita, K. Gamo, S. Namba, J. Vac. Sci. Technol. B 3, 481 (1985).
[CrossRef]

Yamashita, K.

M. Tsuda, S. Oikawa, M. Yabuta, A. Yakota, H. Nakane, K. Yamashita, K. Gamo, S. Namba, J. Vac. Sci. Technol. B 3, 481 (1985).
[CrossRef]

Yamazaki, O.

T. Shiono, K. Setsune, O. Yamazaki, K. Wasa, Appl. Opt. 26, 587 (1987).
[CrossRef] [PubMed]

T. Shiono, K. Setsune, O. Yamazaki, Trans. Inst. Electron. Inf. Commun. Eng. Jpn. J70-C, 1044 (1987).

Appl. Opt. (2)

Inst. Electron. Inf. Commun. Eng. Tech. Rep. (1)

E. Enomoto, H. Nishihara, J. Koyama, Inst. Electron. Inf. Commun. Eng. Tech. Rep. OQE83-89, 15 (1983).

J. Vac. Sci. Technol. B (1)

M. Tsuda, S. Oikawa, M. Yabuta, A. Yakota, H. Nakane, K. Yamashita, K. Gamo, S. Namba, J. Vac. Sci. Technol. B 3, 481 (1985).
[CrossRef]

Opt. Lett. (1)

Trans. Inst. Electron. Inf. Commun. Eng. Jpn. (1)

T. Shiono, K. Setsune, O. Yamazaki, Trans. Inst. Electron. Inf. Commun. Eng. Jpn. J70-C, 1044 (1987).

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Figures (6)

Fig. 1
Fig. 1

Structure of the elliptical RMFL showing (a) the plane figure and (b) the cross section.

Fig. 2
Fig. 2

Resist sensitivity curves obtained by a pattern of 5-μm lines and spaces, where the initial thickness of the resist was 0.7 μm and the accelerating voltage of the EB was 35 kV.

Fig. 3
Fig. 3

Fabrication process of the RMFL from (a) to (e).

Fig. 4
Fig. 4

Photomicrograph of the fabricated circular RMFL.

Fig. 5
Fig. 5

Cross-sectional scanning-electron-microscope photograph of the RMFL before the deposition of the reflection layer.

Fig. 6
Fig. 6

(a) Photograph of the light spot and (b) the intensity profile observed at the focal plane.

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