An optically controlled reflection modulator has been demonstrated that consists of a combination of a GaAs–AlGaAs n-i-p-i doping structure with a multiple-quantum-well structure on top of a distributed Bragg reflector, all grown by molecular-beam epitaxy. A modulation of approximately 60% is obtained on our test structure, corresponding to a differential change of absorption coefficient in the quantum wells of approximately 7500/cm. Changes in reflectance can be observed with a control beam power as low as 1.5 μW. This device structure has the potential of being developed as an optically addressed spatial light modulator for optical information processing.
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