Abstract

An optically controlled reflection modulator has been demonstrated that consists of a combination of a GaAs–AlGaAs n-i-p-i doping structure with a multiple-quantum-well structure on top of a distributed Bragg reflector, all grown by molecular-beam epitaxy. A modulation of approximately 60% is obtained on our test structure, corresponding to a differential change of absorption coefficient in the quantum wells of approximately 7500/cm. Changes in reflectance can be observed with a control beam power as low as 1.5 μW. This device structure has the potential of being developed as an optically addressed spatial light modulator for optical information processing.

© 1989 Optical Society of America

Optically addressed spatial light modulators by MBE-grown nipi MQW structures

Joseph Maserjian, P. O. Andersson, B. R. Hancock, J. M. lannelli, S. T. Eng, F. J. Grunthaner, K.-K. Law, P. O. Holtz, R. J. Simes, L. A. Coldren, A. C. Gossard, and J. L. Merz
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P. J. Bradley, M. Whitehead, G. Parry, P. Mistry, and J. S. Roberts
Appl. Opt. 28(8) 1560-1564 (1989)

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