Abstract

We use a single-mode transfer equation model to study the performance of vertical-cavity surface-emitting distributed-feedback (DFB) and distributed-Bragg-reflector (DBR) semiconductor lasers above threshold. We find that DBR lasers exhibit less envelope spatial hole burning than both single and double phase-shifted DFB lasers and therefore may achieve more stable single-longitudinal-mode operation.

© 1989 Optical Society of America

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