Abstract

An experimental comparison is made between the losses of waveguide bends in disorder-delineated waveguides in semiconductor superlattices composed of GaAs and AlAs layers for simple abrupt bends and abrupt bends with an additional half-angle guiding wall proposed by Shiina et al. [Opt. Lett. 11, 736 (1986)]. For light above the band gap of bulk GaAs, the abrupt and Shiina bends were found to have to 3-dB loss angles of 3 and 7 deg, respectively. This improved performance suggests that the specific geometry of the bends is yet another degree of freedom in designing guiding structure for planar routing.

© 1988 Optical Society of America

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