Abstract

Experiments using intracavity nearly degenerate four-wave mixing in GaAlAs semiconductor laser oscillators and resonant-type amplifiers suggest that the resonance-relaxation process can be simply interpreted in terms of the dynamic Stark effect for a two-level system. This new interpretation is confirmed by a theoretical development demonstrating that lasers and resonant-type amplifiers can actually be represented well by an equivalent two-level system that takes into account both the semiconductor medium and cavity constants. Such an analysis can be useful for the study of higher-order instabilities.

© 1988 Optical Society of America

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