Losses in semiconductor waveguide S bends fabricated by impurity-induced layer disordering

Abstract

An experimental comparison is made between the losses of S bends fabricated by impurity-induced layer disordering in GaAs–AlAs superlattices. For parallel waveguides offset by 100 μm, transition lengths corresponding to 3-dB excess loss were found to be ≈290 μm for approximately single-mode S bends in the form of a raised cosine and ≈335 μm for bends in the form of two constant-radius-of-curvature sections. These buried-channel bends appear to have losses that compare favorably with those formed from rib waveguides.

© 1988 Optical Society of America

Low-loss semiconductor waveguide bends

P. D. Swanson, F. Julien, M. A. Emanuel, L. Sloan, T. Tang, T. A. DeTemple, and J. J. Coleman
Opt. Lett. 13(3) 245-247 (1988)

Reduced loss through improved fabrication for single air interface bends in polymer waveguides

Yongbin Lin, Jaime Cardenas, Seunghyun Kim, and Gregory P. Nordin
Opt. Express 14(26) 12803-12813 (2006)

Fabrication and characterization of straight and compact S-bend optical waveguides on a silicon-on-insulator platform

Rupesh Kumar Navalakhe, Nandita DasGupta, and Bijoy Krishna Das
Appl. Opt. 48(31) G125-G130 (2009)

Low-loss sharp bends in polymer waveguides enabled by the introduction of a thin metal layer

Mustafa Akin Sefunc, Markus Pollnau, and Sonia M. García-Blanco
Opt. Express 21(24) 29808-29817 (2013)

Disorder-induced losses in photonic crystal waveguides with line defects

Dario Gerace and Lucio Claudio Andreani
Opt. Lett. 29(16) 1897-1899 (2004)