Abstract

The steady-state and dynamic behavior of absorption and phase gratings in semi-insulating GaAs and InP have been studied by four-wave mixing. These measurements permit independent study of the space-charge-field screening kinetics and free-carrier recombination kinetics in these materials. The study is important both for the design of optimized materials for photorefractive applications and for the characterization of the defect electronic structure in these materials.

© 1988 Optical Society of America

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References

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  1. A. M. Glass, A. M. Johnson, D. H. Olson, W. Simpson, A. A. Ballman, Appl. Phys. Lett. 44, 948 (1984).
    [CrossRef]
  2. K. Walsh, T. J. Hall, R. E. Burge, Opt. Lett. 12, 1026 (1987).
    [CrossRef] [PubMed]
  3. N. V. Kukhtarev, V. B. Markov, S. G. Odulov, M. S. Soskin, V. L. Vinetskii, Ferroelectrics 22, 949, 961 (1979).
    [CrossRef]
  4. R. B. Bylsma, A. M. Glass, D. H. Olson, Appl. Phys. Lett. 13, 1083 (1988).
    [CrossRef]

1988 (1)

R. B. Bylsma, A. M. Glass, D. H. Olson, Appl. Phys. Lett. 13, 1083 (1988).
[CrossRef]

1987 (1)

1984 (1)

A. M. Glass, A. M. Johnson, D. H. Olson, W. Simpson, A. A. Ballman, Appl. Phys. Lett. 44, 948 (1984).
[CrossRef]

1979 (1)

N. V. Kukhtarev, V. B. Markov, S. G. Odulov, M. S. Soskin, V. L. Vinetskii, Ferroelectrics 22, 949, 961 (1979).
[CrossRef]

Ballman, A. A.

A. M. Glass, A. M. Johnson, D. H. Olson, W. Simpson, A. A. Ballman, Appl. Phys. Lett. 44, 948 (1984).
[CrossRef]

Burge, R. E.

Bylsma, R. B.

R. B. Bylsma, A. M. Glass, D. H. Olson, Appl. Phys. Lett. 13, 1083 (1988).
[CrossRef]

Glass, A. M.

R. B. Bylsma, A. M. Glass, D. H. Olson, Appl. Phys. Lett. 13, 1083 (1988).
[CrossRef]

A. M. Glass, A. M. Johnson, D. H. Olson, W. Simpson, A. A. Ballman, Appl. Phys. Lett. 44, 948 (1984).
[CrossRef]

Hall, T. J.

Johnson, A. M.

A. M. Glass, A. M. Johnson, D. H. Olson, W. Simpson, A. A. Ballman, Appl. Phys. Lett. 44, 948 (1984).
[CrossRef]

Kukhtarev, N. V.

N. V. Kukhtarev, V. B. Markov, S. G. Odulov, M. S. Soskin, V. L. Vinetskii, Ferroelectrics 22, 949, 961 (1979).
[CrossRef]

Markov, V. B.

N. V. Kukhtarev, V. B. Markov, S. G. Odulov, M. S. Soskin, V. L. Vinetskii, Ferroelectrics 22, 949, 961 (1979).
[CrossRef]

Odulov, S. G.

N. V. Kukhtarev, V. B. Markov, S. G. Odulov, M. S. Soskin, V. L. Vinetskii, Ferroelectrics 22, 949, 961 (1979).
[CrossRef]

Olson, D. H.

R. B. Bylsma, A. M. Glass, D. H. Olson, Appl. Phys. Lett. 13, 1083 (1988).
[CrossRef]

A. M. Glass, A. M. Johnson, D. H. Olson, W. Simpson, A. A. Ballman, Appl. Phys. Lett. 44, 948 (1984).
[CrossRef]

Simpson, W.

A. M. Glass, A. M. Johnson, D. H. Olson, W. Simpson, A. A. Ballman, Appl. Phys. Lett. 44, 948 (1984).
[CrossRef]

Soskin, M. S.

N. V. Kukhtarev, V. B. Markov, S. G. Odulov, M. S. Soskin, V. L. Vinetskii, Ferroelectrics 22, 949, 961 (1979).
[CrossRef]

Vinetskii, V. L.

N. V. Kukhtarev, V. B. Markov, S. G. Odulov, M. S. Soskin, V. L. Vinetskii, Ferroelectrics 22, 949, 961 (1979).
[CrossRef]

Walsh, K.

Appl. Phys. Lett. (2)

A. M. Glass, A. M. Johnson, D. H. Olson, W. Simpson, A. A. Ballman, Appl. Phys. Lett. 44, 948 (1984).
[CrossRef]

R. B. Bylsma, A. M. Glass, D. H. Olson, Appl. Phys. Lett. 13, 1083 (1988).
[CrossRef]

Ferroelectrics (1)

N. V. Kukhtarev, V. B. Markov, S. G. Odulov, M. S. Soskin, V. L. Vinetskii, Ferroelectrics 22, 949, 961 (1979).
[CrossRef]

Opt. Lett. (1)

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Figures (2)

Fig. 1
Fig. 1

Diffraction grating decay in GaAs:Cr. The initial fast decay is the decay of the photochromic portion of the grating, while the slower decay is due to the photorefractive grating.

Fig. 2
Fig. 2

Decay of photochromic grating in GaAs:Cr.

Tables (2)

Tables Icon

Table 1 Ratio, R, of Absorption Modulation to Refractive Index Modulation and Resulting Deep-Level Absorption Cross Section, s, and Electro-Optic Parameter, r41

Tables Icon

Table 2 Comparison of Photochromic Decay Rate, τα, With the Photorefractive Decay Rates, τn, of Eq. (7) in GaAs:Cr Crystals

Equations (7)

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η n = ( 1 - e - α d ) sin 2 π Δ n d λ cos θ ,
Δ n = ½ n 0 3 r eff E sc ,
E sc = N e L 0 ( K L 1 + K 2 L 2 ) ,
η α = ( 1 - e - α d ) sinh 2 Δ α d 2 cos θ ,
Δ α = N s .
R = ( η α η n ) 1 / 2 = ( s n 0 3 r eff ) [ 0 λ ( 1 + K 2 L 2 ) π e K L 2 ] .
τ = τ di ( 1 + K 2 L diff 2 + K 2 L drift 2 1 + K 2 L diff 2 ) ,

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